公开(公告)号：US6106626A

公开(公告)日：2000-08-22

申请号：US204525

申请日：1998-12-03

Applicant: Kun-lin Guan ,  Wei-jen Liu ,  Jin-lang Wu

Inventor： Kun-lin Guan ,  Wei-jen Liu ,  Jin-lang Wu

IPC: C23C16/44 ,  C23C16/00

CPC classification number: C23C16/4412 ,  C23C16/4401

Abstract: An apparatus and a method for preventing contamination to a low pressure chemical vapor deposition chamber (LPCVD) are provided. The apparatus includes an exhaust-vent device which is connected to a vent outlet and a vacuum pump on a process chamber in parallel with and bypassing a gate valve such that the exhaust-vent remains open during a continuous pumping of the process chamber for wafer loading and unloading. The exhaust-vent device is constructed by two end conduits that have a larger diameter connected by a middle conduit that has a smaller diameter such that during vacuum evacuation, the fluid flow rate in the smaller diameter conduit is at least four times that in the large conduit to effectively prevent the deposition in the small conduit of reaction by-products. The present invention apparatus may further be enhanced by mounting heating tapes on the vacuum conduits and heating the conduits to a temperature of between about 100.degree. C. and about 180.degree. C. to further prevent the deposition of contaminating particles on the interior walls of the conduits.

Abstract translation: 提供了一种用于防止对低压化学气相沉积室（LPCVD）的污染的装置和方法。 该装置包括排气装置，该排气装置与处理室平行并绕过闸阀连接到排气口和真空泵，使得排气口在连续泵送晶圆装载处理室期间保持打开 卸货。 排气装置由具有较小直径的两个末端导管构成，其中直径较小的直径连接，使得在真空排气过程中，较小直径导管中的流体流量至少为大直径导管的四倍 导管，以有效防止沉积在小管道中的反应副产物。 通过将加热带安装在真空管道上并将管道加热至约100℃至约180℃的温度，可进一步增强本发明的装置，以进一步防止污染颗粒沉积在内壁上 导管。

公开(公告)号：US06561226B1

公开(公告)日：2003-05-13

申请号：US09702244

申请日：2000-10-30

Applicant: Wei-jen Liu

Inventor： Wei-jen Liu

IPC: C23C1600

CPC classification number: C23C16/4412 ,  Y10T137/8242

Abstract: A closed-loop controlled apparatus and method for preventing contamination to a low pressure chemical vapor deposition chamber (LPCVD) are provided. The apparatus includes an exhaust vent equipped with a butterfly valve for controlling a flow rate through the vent. The exhaust vent is connected to a vacuum outlet and a vacuum pump on a process chamber in parallel with and bypassing a gate valve such that the exhaust vent can be opened for the continuous pumping of the process chamber during wafer loading and unloading steps. The exhaust vent may be constructed by two end conduits that have a larger diameter which are connected by a middle conduit that has a smaller diameter such that during vacuum evacuation, the fluid flow rate in the small diameter conduit is at least four times that in the large conduit to effectively prevent the deposition and blockage of the small conduit by reaction by-products or contaminating particles. The butterfly valve installed in the exhaust vent provides an indication of the degree of blockage of the vent and enables a process controller to shut-off the process chamber for wet cleaning when a blockage has been detected for preventing chamber contamination.

Abstract translation: 提供了一种用于防止对低压化学气相沉积室（LPCVD）的污染的闭环控制装置和方法。 该装置包括具有用于控制通过通气口的流量的蝶阀的排气口。 排气口与处理室中的真空出口和真空泵连接，并与栅极阀并联并绕过闸阀，使得可以打开排气口以在晶片装载和卸载步骤期间连续泵送处理室。 排气口可以由具有较大直径的两个端部管道构成，其通过具有较小直径的中间管道连接，使得在真空抽空期间，小直径管道中的流体流速为至少四倍于 大的管道，以有效地防止反应副产物或污染颗粒沉积和堵塞小管道。 安装在排气口中的蝶阀提供通气口阻塞程度的指示，并且当已经检测到阻塞以防止室污染时，能够使过程控制器关闭处理室用于湿清洗。