公开(公告)号：US07098501B2

公开(公告)日：2006-08-29

申请号：US10360267

申请日：2003-02-05

申请人： Weiran Kong ,  Bernard Ho ,  David Greenhill ,  Sudhakar Bobba

发明人： Weiran Kong ,  Bernard Ho ,  David Greenhill ,  Sudhakar Bobba

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L28/40 ,  H01L21/76838 ,  H01L23/5223 ,  H01L23/5286 ,  H01L2924/0002 ,  H01L2924/00

摘要： A capacitor structure in a semiconductor device is provided. The capacitor structure includes a first power rail on a topmost level of the semiconductor device, and a second power rail on the topmost level of the semiconductor device. The capacitor structure also includes a dielectric layer disposed over at least a portion of one of the first power rail and the second power rail. The capacitor structure further includes a conductive layer disposed over and between the first power rail and the second power rail where the conductive layer is in electrical contact with the power rail not having the dielectric layer, and the conductive layer is disposed over the dielectric layer.

摘要翻译： 提供半导体器件中的电容器结构。 电容器结构包括在半导体器件的最上层的第一电源轨和半导体器件的最上层的第二电源轨。 电容器结构还包括设置在第一电力轨道和第二电力轨道之一的至少一部分上的电介质层。 电容器结构还包括设置在第一电力轨道和第二电力轨道之上和之间的导电层，其中导电层与不具有电介质层的电力轨道电接触，并且导电层设置在介电层上。