-
公开(公告)号：US5478679A
公开(公告)日：1995-12-26
申请号：US344006
申请日：1994-11-23
申请人： Wen-An Loong , Shyi-Long Shy , Hong-Tsz Pan , Ming-Tzong Yang , Guey-Chi Guo , Yueh-Lin Chou
发明人： Wen-An Loong , Shyi-Long Shy , Hong-Tsz Pan , Ming-Tzong Yang , Guey-Chi Guo , Yueh-Lin Chou
摘要： This invention describes the fabrication and use of a self-aligning phase shifting mask comprised of phase shifting material formed over a patterned layer of half-tone or partially transmitting material. The interaction of light passing through the phase shifting and partially transmitting areas of the mask, the phase shifting only areas of the mask, and the non phase shifting transparent areas of the mask provides greater image resolution and depth of focus tolerance than other lithography methods including other known phase shifting techniques.
摘要翻译： 本发明描述了由在半色调或部分透射材料的图案化层上形成的相移材料构成的自对准相移掩模的制造和使用。 通过相位偏移的光和面罩的部分透射区域，仅相对于掩模的相移以及掩模的非相移透明区域的相互作用提供了比其它光刻方法更大的图像分辨率和聚焦容限深度，包括 其他已知的相移技术。
-
公开(公告)号：US06492069B1
公开(公告)日：2002-12-10
申请号：US09534171
申请日：2000-03-24
申请人： Ching-Liang Wu , Yueh-Lin Chou , Jen-Hui Tseng
发明人： Ching-Liang Wu , Yueh-Lin Chou , Jen-Hui Tseng
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： This invention discloses a method for forming an attenuated phase-shifting mask, including following steps. A transparent plate is provided, on which a phase-shifting layer, opaque layer, and undeveloped photoresist layer being stacked on the transparent plate successively. A first part of the photoresist layer is removed until exposing a first region of the opaque layer. The first region of the opaque layer is removed for exposing parts of the phase-shifting layer. A second part of the photoresist layer is removed for exposing a second region of the opaque layer. The exposed phase-shifting layer is then etched by employing the opaque layer as an etching mask. Then the exposed opaque layer and photoresist layer are successively remove, thus forming a complete attenuated phase-shifting mask.
摘要翻译： 本发明公开了一种形成衰减相移掩模的方法，包括以下步骤。 提供透明板，其上依次在透明板上层叠有相移层，不透明层和未显影的光致抗蚀剂层。 除去光致抗蚀剂层的第一部分直到暴露不透明层的第一区域。 除去不透明层的第一区域以暴露部分相移层。 除去光致抗蚀剂层的第二部分以暴露不透明层的第二区域。 然后通过使用不透明层作为蚀刻掩模来蚀刻暴露的相移层。 然后暴露的不透明层和光致抗蚀剂层被连续地去除，从而形成完整的衰减相移掩模。
-
3.发明授权Method for checking phase shift angle of phase shift mask, lithography process and phase shift mask 有权用于检查相移掩模，光刻工艺和相移掩模的相移角的方法公开(公告)号：US07498105B2
公开(公告)日：2009-03-03
申请号：US11160420
申请日：2005-06-23
申请人： Yung-Feng Cheng , Yueh-Lin Chou , Chin-Lung Lin
发明人： Yung-Feng Cheng , Yueh-Lin Chou , Chin-Lung Lin
IPC分类号： G03F9/00
摘要： A method for checking a phase shift angle of a PSM is described. A calibration curve of a characteristic value of lithography performance with respect to the phase shift angle of a type of PSM is acquired. The patterns of a PSM of the type to be checked are transferred to a photoresist layer to form photoresist patterns, and the characteristic value is measured. The real phase shift angle of the PSM is derived based on the characteristic value according to the calibration curve.
摘要翻译： 描述了用于检查PSM的相移角的方法。 获取相对于PSM类型的相移角的光刻性能的特征值的校准曲线。 要检查的类型的PSM的图案被转印到光致抗蚀剂层以形成光致抗蚀剂图案，并且测量特征值。 基于根据校准曲线的特征值导出PSM的实际相移角。
-
4.发明申请METHOD FOR CHECKING PHASE SHIFT ANGLE OF PHASE SHIFT MASK, LITHOGRAPHY PROCESS AND PHASE SHIFT MASK 有权检查相移片掩模相位移角的方法，光刻过程和相移片公开(公告)号：US20060292455A1
公开(公告)日：2006-12-28
申请号：US11160420
申请日：2005-06-23
申请人： Yung-Feng Cheng , Yueh-Lin Chou , Chin-Lung Lin
发明人： Yung-Feng Cheng , Yueh-Lin Chou , Chin-Lung Lin
摘要： A method for checking a phase shift angle of a PSM is described. A calibration curve of a characteristic value of lithography performance with respect to the phase shift angle of a type of PSM is acquired. The patterns of a PSM of the type to be checked are transferred to a photoresist layer to form photoresist patterns, and the characteristic value is measured. The real phase shift angle of the PSM is derived based on the characteristic value according to the calibration curve.
摘要翻译： 描述了用于检查PSM的相移角的方法。 获取相对于PSM类型的相移角的光刻性能的特征值的校准曲线。 要检查的类型的PSM的图案被转印到光致抗蚀剂层以形成光致抗蚀剂图案，并且测量特征值。 基于根据校准曲线的特征值导出PSM的实际相移角。
-
5.发明授权
公开(公告)号：US6015641A
公开(公告)日：2000-01-18
申请号：US111683
申请日：1998-07-08
申请人： Yueh-Lin Chou
发明人： Yueh-Lin Chou
CPC分类号： G03F7/70441 , G03F1/36
摘要： A bitline mask pattern having reduced optical proximity effect for use in manufacturing a semiconductor memory device is disclosed. The bitline mask pattern comprises: a plurality of bitlines having a plurality of contact pads that are equally spaced apart. The bitlines are arranged parallel to each other in a columnar array and such that alternate bitlines have their contact pads aligned with each other. The contact pads having a rectangular shape, but at each corner of the contact pad, rectangular corner portions removed, and at opposing sides of the contact pads, rectangular side portions are removed.
摘要翻译： 公开了一种具有降低的用于制造半导体存储器件的光学邻近效应的位线掩模图案。 位线掩模图案包括：多个位线，其具有等间隔开的多个接触焊盘。 位线以柱状阵列彼此平行布置，并且使得替代位线具有彼此对准的接触垫。 接触垫具有矩形形状，但是在接触垫的每个角部，去除了矩形角部分，并且在接触垫的相对侧，去除矩形侧部。
-
-
-
-
搜索结果
5 条记录 (耗时 0.025 秒)
