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    METHOD OF SIMULTANEOUSLY CONTROLLING ADI-AEI CD DIFFERENCES OF OPENINGS HAVING DIFFERENT SIZES AND ETCHING PROCESS UTILIZING THE SAME METHOD
    5.
    发明申请
    METHOD OF SIMULTANEOUSLY CONTROLLING ADI-AEI CD DIFFERENCES OF OPENINGS HAVING DIFFERENT SIZES AND ETCHING PROCESS UTILIZING THE SAME METHOD 有权
    同时控制具有不同尺寸的开口的ADI-AEI CD差异的方法和利用该方法的蚀刻工艺

    公开(公告)号：US20070105322A1

    公开(公告)日：2007-05-10

    申请号：US11163981

    申请日：2005-11-07

    申请人： Pei-Yu Chou ,  Jiunn-Hsing Liao

    发明人： Pei-Yu Chou ,  Jiunn-Hsing Liao

    IPC分类号： H01L21/8234

    CPC分类号： H01L21/823475 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76895

    摘要： A method of simultaneously controlling the ADI-AEI CD differences of openings having different sizes is disclosed. The openings are formed by: forming an ARC and a photoresist layer with a first and a second opening patterns of different sizes therein on a material layer, and etching the ARC and the material layer with the photoresist layer as a mask to form in the material layer a first/second opening corresponding to the first/second opening pattern, wherein the etching recipe makes the first/second opening smaller than the first/second opening pattern by a first/second size difference (ΔS1/ΔS2) and the difference between ΔS1 and ΔS2 is a relative size difference. The method is characterized by that an etching parameter affecting the relative size difference is set at a first value in etching the ARC and at a second value different from the first value in etching the material layer.

    摘要翻译： 公开了同时控制具有不同尺寸的开口的ADI-AEI CD差异的方法。 开口形成为：在材料层上形成具有不同尺寸的第一和第二开口图案的ARC和光致抗蚀剂层，并且用光致抗蚀剂层作为掩模蚀刻ARC和材料层以形成材料 对应于第一/第二开口图案的第一/第二开口分层，其中蚀刻配方使第一/第二开口小于第一/第二开口图案的第一/第二尺寸差（ΔS> 1 < / DeltaS 2＆gt;），并且DeltaS 1＆lt; 1＆gt;和DeltaS 2＆lt; 2＆gt;之间的差是相对尺寸差。 该方法的特征在于，在蚀刻ARC中将影响相对尺寸差的蚀刻参数设置为第一值，并且在蚀刻材料层时设定与第一值不同的第二值。

    Method of simultaneously controlling ADI-AEI CD differences of openings having different sizes and etching process utilizing the same method
    6.
    发明授权
    Method of simultaneously controlling ADI-AEI CD differences of openings having different sizes and etching process utilizing the same method 有权
    使用相同方法同时控制具有不同尺寸的开口和蚀刻工艺的ADI-AEI CD差异的方法

    公开(公告)号：US07319067B2

    公开(公告)日：2008-01-15

    申请号：US11163981

    申请日：2005-11-07

    申请人： Pei-Yu Chou ,  Jiunn-Hsing Liao

    发明人： Pei-Yu Chou ,  Jiunn-Hsing Liao

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/823475 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76895

    摘要： A method of simultaneously controlling the ADI-AEI CD differences of openings having different sizes is disclosed. The openings are formed by: forming an ARC and a photoresist layer with a first and a second opening patterns of different sizes therein on a material layer, and etching the ARC and the material layer with the photoresist layer as a mask to form in the material layer a first/second opening corresponding to the first/second opening pattern, wherein the etching recipe makes the first/second opening smaller than the first/second opening pattern by a first/second size difference (ΔS1/ΔS2) and the difference between ΔS1 and ΔS2 is a relative size difference. The method is characterized by that an etching parameter affecting the relative size difference is set at a first value in etching the ARC and at a second value different from the first value in etching the material layer.

    摘要翻译： 公开了同时控制具有不同尺寸的开口的ADI-AEI CD差异的方法。 开口形成为：在材料层上形成具有不同尺寸的第一和第二开口图案的ARC和光致抗蚀剂层，并且用光致抗蚀剂层作为掩模蚀刻ARC和材料层以形成材料 对应于第一/第二开口图案的第一/第二开口分层，其中蚀刻配方使得第一/第二开口小于第一/第二开口图案的第一/第二尺寸差（ΔS> 1 / / DeltaS 2＆gt;），并且DeltaS 1＆lt; 1＆gt;和DeltaS 2＆lt; 2＆gt;之间的差是相对尺寸差。 该方法的特征在于，在蚀刻ARC中将影响相对尺寸差的蚀刻参数设置为第一值，并且在蚀刻材料层时设定与第一值不同的第二值。