公开(公告)号：US20080268557A1

公开(公告)日：2008-10-30

申请号：US11945384

申请日：2007-11-27

申请人： Wen-Ping LIANG ,  Kuo Hui SU

发明人： Wen-Ping LIANG ,  Kuo Hui SU

IPC分类号： H01L21/66

CPC分类号： H01L22/12

摘要： A method for measuring a thin film thickness is provided. The method includes the following steps: providing a plurality of structures, each including a semiconductor substrate, a thin film, and a metal layer; measuring resistances of the metal layers of the plurality of structures and thicknesses of the thin films of the plurality of structures to obtain a plurality of resistance values and a plurality of corresponding thickness values; establishing a thickness-resistance table based on the plurality of resistance values and thickness values; providing a structure to be tested including a semiconductor substrate, a thin film, and a metal layer; and measuring resistance of the metal layer of the structure to be tested to determine a thickness value of the thin film of the structure to be tested according to the thickness-resistance table.

摘要翻译： 提供了一种测量薄膜厚度的方法。 该方法包括以下步骤：提供多个结构，每个结构包括半导体衬底，薄膜和金属层; 测量多个结构的金属层的电阻和多个结构的薄膜的厚度，以获得多个电阻值和多个对应的厚度值; 基于多个电阻值和厚度值建立厚度电阻表; 提供待测试的结构，包括半导体衬底，薄膜和金属层; 并测量被测结构的金属层的电阻，以根据厚度电阻表确定待测结构的薄膜的厚度值。

公开(公告)号：US20160284853A1

公开(公告)日：2016-09-29

申请号：US15036662

申请日：2014-11-13

申请人： Duy Vu PHAM ,  Kuo Hui SU

发明人： Duy Vu PHAM ,  Kuo Hui SU

IPC分类号： H01L29/786 ,  H01L29/45 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L29/417 ,  H01L23/31

CPC分类号： H01L29/7869 ,  H01L21/02271 ,  H01L23/3171 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618

摘要： The present invention relates to a novel thin film transistor (TFT) comprising a substrate (100) with a gate electrode layer (101) deposited and patterned thereon and a gate insulator layer (102) deposited on the gate electrode layer and the substrate, characterized in that the transistor further comprises (i) a carrier injection layer (103) arranged above the gate insulator layer, (ii) a source/drain (S/D) electrode layer (104) deposited on the carrier injection layer, and (iii) a semiconductor layer (106), methods for the production of such novel TFTs, devices comprising such TFTs, and to the use of such TFTs.

摘要翻译： 本发明涉及一种新颖的薄膜晶体管（TFT），其包括在其上沉积和图案化的栅极电极层（101）的基板（100）和沉积在栅电极层和基板上的栅极绝缘体层（102），其特征在于 晶体管还包括（i）布置在栅极绝缘体层上方的载流子注入层（103），（ii）沉积在载流子注入层上的源极/漏极（S / D）电极层（104），和（iii ）半导体层（106），用于生产这种新型TFT的方法，包括这种TFT的器件以及这种TFT的使用。