公开(公告)号：US20210408370A1

公开(公告)日：2021-12-30

申请号：US16917334

申请日：2020-06-30

Applicant: Western Digital Technologies, Inc.

Inventor： Brian R. YORK ,  Cherngye HWANG ,  Alan SPOOL ,  Michael GRIBELYUK ,  Quang LE

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/06 ,  H01L43/04 ,  H03B15/00

Abstract: A SOT device includes a bismuth antimony dopant element (BiSbE) alloy layer over a substrate. The BiSbE alloy layer is used as a topological insulator. The BiSbE alloy layer includes bismuth, antimony, AND a dopant element. The dopant element is a non-metallic dopant element, a metallic dopant element, and combinations thereof. Examples of metallic dopant elements include Ni, Co, Fe, CoFe, NiFe, NiCo, NiCu, CoCu, NiAg, CuAg, Cu, Al, Zn, Ag, Ga, In, or combinations thereof. Examples of non-metallic dopant elements include Si, P, Ge, or combinations thereof. The BiSbE alloy layer can include a plurality of BiSb lamellae layers and one or more dopant element lamellae layers. The BiSbE alloy layer has a (012) orientation.