公开(公告)号：US20240420733A1

公开(公告)日：2024-12-19

申请号：US18740054

申请日：2024-06-11

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Brian R. YORK ,  Sharon Swee Ling BANH ,  Hassan OSMAN ,  Hisashi TAKANO

IPC: G11B5/39 ,  G01R33/09 ,  G11C11/16 ,  H03K19/18 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85 ,  H10N52/80

Abstract: The present disclosure generally relates to spintronic material stacks and devices. The various disclosed embodiments of YBiPt based spin orbit torque (SOT) stacks can be used for high temperature applications. Disclosed herein are various buffer and/or interlayer configurations in spintronic stacks that can promote growth of YBiPt in the (110) orientation, to promote a high spin Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack comprising a buffer layer comprising one or more layers, the one or more layers each individually comprising: MgO (100), TiN (100), Ta, Nb, HfN, Ta3W2 (110), TaW2 (100), Ta3W2N, TaW2N, or heated YPt, an SOT layer comprising YBiPt in the (110) orientation, an interlayer comprising one or more of MgO, Ta3WN, TaW3N, Ta3W (110), TaW3 (100), YPt (110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN, and a ferromagnetic layer.

公开(公告)号：US20240240994A1

公开(公告)日：2024-07-18

申请号：US18355102

申请日：2023-07-19

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Xiaoyong LIU ,  Brian R. YORK ,  Cherngye HWANG ,  Rohan Babu NAGABHIRAVA ,  Kuok San HO ,  Hisashi TAKANO ,  Son T. LE ,  Nam Hai PHAM ,  Huy H. HO

IPC: G01K7/36 ,  G11B5/39

CPC classification number: G01K7/36 ,  G11B5/3906 ,  G11B2005/0021

Abstract: The present disclosure generally relates to temperature detection devices, comprising an antiferromagnetic (AFM) layer a ferromagnetic (FM) layer disposed on the AFM layer and a spin-orbit torque (SOT) material layer disposed on the FM layer. The SOT material layer may comprise: a SOT material portion; a SOT material portion and an insulating material portion; or a plurality of SOT material portions and a plurality of insulating material portions. The temperature detection devices may also have a second FM layer disposed on the SOT material layer. The temperature detection devices may also have a second AFM layer disposed on the second FM layer. In another embodiment, the temperature detection devices may also have a heat sink.

公开(公告)号：US20230121375A1

公开(公告)日：2023-04-20

申请号：US18082721

申请日：2022-12-16

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Susumu OKAMURA ,  Xiaoyong LIU ,  Kuok San HO ,  Hisashi TAKANO

IPC: G11B5/39 ,  H10B61/00 ,  H10N52/80 ,  H01F10/32 ,  H10N50/85 ,  H10N52/00 ,  G11C11/16 ,  G11B5/31

Abstract: The present disclosure generally relate to spin-orbit torque (SOT) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.

公开(公告)号：US20240412759A1

公开(公告)日：2024-12-12

申请号：US18229772

申请日：2023-08-03

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Xiaoyong LIU ,  Michael A. GRIBELYUK ,  Son T. LE ,  Hisashi TAKANO

IPC: G11B5/39 ,  G11B5/187

Abstract: The present disclosure generally relates to spin-orbit torque (SOT) device comprising a bismuth antimony (BiSb) layer. The SOT device comprises a seed layer and a BiSb layer having a (012) orientation. The seed layer comprises at least one of an amorphous/nanocrystalline material with a nearest neighbor x-ray diffraction peak with a d-spacing in the range of about 2.02 Å to about 2.20 Å; a polycrystalline material having a (111) orientation and an a-axis of about 3.53 Å to about 3.81 Å; and a polycrystalline material having a cubic (100) or tetragonal (001) orientation and an a-axis of about 4.1 Å to about 4.7 Å. When the seed layer comprises an amorphous material or a polycrystalline material having a (111), the BiSb layer is doped, and the seed layer has a lower a/c ratio than when the seed layer comprises polycrystalline material having a cubic (100) or tetragonal (001) orientation.

公开(公告)号：US20240282333A1

公开(公告)日：2024-08-22

申请号：US18637904

申请日：2024-04-17

Applicant: Western Digital Technologies, Inc.

Inventor： Ning SHI ,  Brian R. YORK ,  Susumu OKAMURA ,  Suping SONG

IPC: G11B5/39

CPC classification number: G11B5/3929 ,  G11B5/3912

Abstract: Aspects of the present disclosure generally relate to magnetic recording heads (such as write heads of data storage devices) that include multilayer structures to facilitate targeted switching and relatively low coercivity. In one or more embodiments, a magnetic recording head includes an iron-cobalt (FeCo) layer having a crystalline structure that is a cubic lattice structure, a first crystalline layer formed of a first material, and a second crystalline layer between the first crystalline layer and the FeCo layer. The second crystalline layer is formed of a second material different from the first material, and the second crystalline layer interfaces both the FeCo layer and the first crystalline layer. The crystalline structure of the FeCo layer has a texture of .

公开(公告)号：US20240112840A1

公开(公告)日：2024-04-04

申请号：US17956786

申请日：2022-09-29

Applicant: Western Digital Technologies, Inc.

Inventor： Susumu OKAMURA ,  Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Randy G. SIMMONS ,  Kuok San HO ,  Hisashi TAKANO

IPC: H01F10/32 ,  C22C19/07 ,  G11B5/39 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10

CPC classification number: H01F10/329 ,  C22C19/07 ,  G11B5/39 ,  H01L27/222 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  G11B2005/0024

Abstract: Embodiments of the present disclosure relate to a cobalt-boron (CoB) layer for magnetic recording devices, memory devices, and storage devices. In one or more embodiments, the CoB layer is part of a spin-orbit torque (SOT) device. In one or more embodiments, the SOT device is part of an SOT based sensor, an SOT based writer, a memory device (such as a magnetoresistive random-access memory (MRAM) device), and/or a storage device (such as a hard disk drive (HDD) or a tape drive). In one embodiment, an SOT device includes a seed layer, and a cap layer spaced from the seed layer. The SOT device includes a spin-orbit torque (SOT) layer, and a nano layer (NL) between the seed layer and the cap layer. The SOT device includes a cobalt-boron (CoB) layer between the seed layer and the cap layer, and the CoB layer is ferromagnetic.

公开(公告)号：US20240107893A1

公开(公告)日：2024-03-28

申请号：US17951596

申请日：2022-09-23

Applicant: Western Digital Technologies, Inc.

Inventor： Susumu OKAMURA ,  James Mac FREITAG ,  Yuankai ZHENG ,  Brian R. YORK

IPC: H01L43/08 ,  G01R33/09 ,  G11B5/39 ,  G11C11/16 ,  H01F10/32 ,  H01L27/22 ,  H01L43/10

CPC classification number: H01L43/08 ,  G01R33/093 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/325 ,  H01F10/3272 ,  H01L27/222 ,  H01L43/10 ,  G11B2005/3996

Abstract: The present disclosure generally relates to magnetoresistive (MR) devices. The MR device comprises a synthetic antiferromagnetic (SAF) layer that increases exchange coupling field, and in turn, less magnetic noise of such devices. The MR device comprises a first ferromagnetic (FM1) layer and a second ferromagnetic (FM2) layer, in between which is an SAF spacer of RuAl alloy having a B2 crystalline structure which may grow epitaxial on BCC (110) or FCC (111) textures, meaning that the (110) or (111) plane is parallel to the surface of MR device substrate. Further, amorphous layers may be inserted into the device structure to reset the growth texture of the device to a (001), (110), or (111) texture in order to promote the growth of tunneling barrier layers or antiferromagnetic (AF) pinning layers.

公开(公告)号：US20230197132A1

公开(公告)日：2023-06-22

申请号：US17854568

申请日：2022-06-30

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Cherngye HWANG ,  Brian R. YORK ,  Randy G. SIMMONS ,  Xiaoyong LIU ,  Kuok San HO ,  Hisashi TAKANO ,  Michael A. GRIBELYUK ,  Xiaoyu XU

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L43/04 ,  H01L43/14 ,  H01L43/06 ,  H01L27/22

CPC classification number: G11C11/161 ,  G11C11/1675 ,  G11C11/1673 ,  H01L43/08 ,  H01L43/10 ,  H01L43/04 ,  H01L43/14 ,  H01L43/06 ,  H01L27/222

Abstract: The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a (012) orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the (012) orientation. The BiSbE layer may be formed on a texturing layer to ensure the (012) orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the (012) orientation of the doped BiSbE layer.

公开(公告)号：US20230027086A1

公开(公告)日：2023-01-26

申请号：US17954679

申请日：2022-09-28

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Cherngye HWANG ,  Brian R. YORK ,  Andrew CHEN ,  Thao A. NGUYEN ,  Yongchul AHN ,  Xiaoyong LIU ,  Hongquan JIANG ,  Zheng GAO ,  Kuok San HO

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  H01F10/32 ,  G11B5/39

Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.

公开(公告)号：US20210336127A1

公开(公告)日：2021-10-28

申请号：US16861118

申请日：2020-04-28

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Cherngye HWANG ,  Brian R. YORK ,  Andrew CHEN ,  Thao A. NGUYEN ,  Yongchul AHN ,  Xiaoyong LIU ,  Hongquan JIANG ,  Zheng GAO ,  Kuok San HO

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  H01F10/32 ,  G11B5/39

Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.