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公开(公告)号：US07236053B2
公开(公告)日：2007-06-26
申请号：US11132619
申请日：2005-05-18
IPC分类号： H03F3/217
CPC分类号： H03F3/191 , H03F3/217 , H03F3/2176 , H03F2200/222 , H03F2200/387
摘要： A switch mode power amplifier includes a transistor responsive to input signals above 1.0 GHz and which includes one terminal coupled to ground and another terminal conductively coupled to a power source. A resonant circuit coupled the second terminal to an output with a resistive load coupled across the output and ground. When the transistor is turned on the second terminal is coupled to ground and when the transistor is turned off, current from the power supply to the second terminal is steered into internal capacitance of the transistor and causes voltage on the second terminal to rise to a maximum value and then decrease, the voltage at the second terminal being coupled to the output terminal through the resonant circuit. In preferred embodiments, the transistor comprises a compound semiconductor field effect transistor with the first terminal being a source terminal and the second terminal being a drain terminal. The field effect transistor is preferably a compound high electron mobility transistor (HEMT) or compound MESFET, but in other embodiments the transistor can be the compound LDMOS, compound bipolar transistor, or compound MOSFET.
摘要翻译： 开关模式功率放大器包括响应于1.0GHz以上的输入信号的晶体管，其包括耦合到地的一个端子和与电源导电耦合的另一端子。 谐振电路将第二端子耦合到具有耦合在输出和地之间的电阻负载的输出端。 当晶体管导通时，第二端子接地，当晶体管截止时，从电源向第二端子的电流转向晶体管的内部电容，并使第二端子上的电压上升到最大值 值，然后减小，第二端子处的电压通过谐振电路耦合到输出端子。 在优选实施例中，晶体管包括化合物半导体场效应晶体管，其中第一端子是源极端子，第二端子是漏极端子。 场效应晶体管优选为化合物高电子迁移率晶体管（HEMT）或化合物MESFET，但在其它实施方案中，晶体管可以是化合物LDMOS，复合双极晶体管或复合MOSFET。
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公开(公告)号：US07518451B2
公开(公告)日：2009-04-14
申请号：US11767240
申请日：2007-06-22
IPC分类号： H03F3/217
CPC分类号： H03F3/191 , H03F3/217 , H03F3/2176 , H03F2200/222 , H03F2200/387
摘要： A switch mode power amplifier includes a transistor responsive to input signals above 1.0 GHz and which includes one terminal coupled to ground and another terminal conductively coupled to a power source. A resonant circuit coupled the second terminal to an output with a resistive load coupled across the output and ground. When the transistor is turned on the second terminal is coupled to ground and when the transistor is turned off, current from the power supply to the second terminal is steered into internal capacitance of the transistor and causes voltage on the second terminal to rise to a maximum value and then decrease, the voltage at the second terminal being coupled to the output terminal through the resonant circuit. In preferred embodiments, the transistor comprises a compound semiconductor field effect transistor with the first terminal being a source terminal and the second terminal being a drain terminal. The field effect transistor is preferably a compound high electron mobility transistor (HEMT) or compound MESFET, but in other embodiments the transistor can be the compound LDMOS, compound bipolar transistor, or compound MOSFET.
摘要翻译： 开关模式功率放大器包括响应于1.0GHz以上的输入信号的晶体管，其包括耦合到地的一个端子和与电源导电耦合的另一端子。 谐振电路将第二端子耦合到具有耦合在输出和地之间的电阻负载的输出端。 当晶体管导通时，第二端子接地，当晶体管截止时，从电源向第二端子的电流转向晶体管的内部电容，并使第二端子上的电压上升到最大值 值，然后减小，第二端子处的电压通过谐振电路耦合到输出端子。 在优选实施例中，晶体管包括化合物半导体场效应晶体管，其中第一端子是源极端子，第二端子是漏极端子。 场效应晶体管优选为化合物高电子迁移率晶体管（HEMT）或化合物MESFET，但在其它实施方案中，晶体管可以是化合物LDMOS，复合双极晶体管或复合MOSFET。
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公开(公告)号：US5404109A
公开(公告)日：1995-04-04
申请号：US166605
申请日：1993-12-13
CPC分类号： G01R31/2822
摘要： A test system for measuring the characteristics of an active circuit employs a pulsed bias technique for periodically biasing the input control port of the active circuit into the active region of operation. Biasing is achieved with a bias voltage that is periodically pulsed ON and OFF. An RF source is pulse modulated ON and OFF synchronously with the pulsed bias voltage and applied to the input control port of the active circuit. The pulsed RF occupies a portion of the time interval encompassed by the pulsed bias voltage. These voltages are combined and applied to the input port of the active circuit which operates only during the presence of the pulsed bias voltage and which is OFF during the absence of the pulsed bias voltage. A DC supply is utilized to bias the output port. The amplified RF power is then measured at the output port of the circuit, after the RF power has been separated from the DC bias by a non-reciprocal device.
摘要翻译： 用于测量有源电路的特性的测试系统采用脉冲偏置技术来周期性地将有源电路的输入控制端口偏置到有源操作区域中。 通过周期性脉冲ON和OFF的偏置电压来实现偏置。 RF源与脉冲偏置电压同步脉冲调制ON和OFF，并施加到有源电路的输入控制端口。 脉冲RF占据由脉冲偏置电压包围的时间间隔的一部分。 这些电压被组合并且被施加到有源电路的输入端口，该有源电路仅在脉冲偏置电压的存在期间操作，并且在不存在脉冲偏置电压时为OFF。 使用直流电源偏置输出端口。 然后在RF功率通过非互易器件与DC偏置分离之后，在电路的输出端口处测量放大的RF功率。
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