High efficiency switch-mode power amplifier
    1.
    发明授权
    High efficiency switch-mode power amplifier 有权
    高效率开关模式功率放大器

    公开(公告)号:US07236053B2

    公开(公告)日:2007-06-26

    申请号:US11132619

    申请日:2005-05-18

    IPC分类号: H03F3/217

    摘要: A switch mode power amplifier includes a transistor responsive to input signals above 1.0 GHz and which includes one terminal coupled to ground and another terminal conductively coupled to a power source. A resonant circuit coupled the second terminal to an output with a resistive load coupled across the output and ground. When the transistor is turned on the second terminal is coupled to ground and when the transistor is turned off, current from the power supply to the second terminal is steered into internal capacitance of the transistor and causes voltage on the second terminal to rise to a maximum value and then decrease, the voltage at the second terminal being coupled to the output terminal through the resonant circuit. In preferred embodiments, the transistor comprises a compound semiconductor field effect transistor with the first terminal being a source terminal and the second terminal being a drain terminal. The field effect transistor is preferably a compound high electron mobility transistor (HEMT) or compound MESFET, but in other embodiments the transistor can be the compound LDMOS, compound bipolar transistor, or compound MOSFET.

    摘要翻译: 开关模式功率放大器包括响应于1.0GHz以上的输入信号的晶体管,其包括耦合到地的一个端子和与电源导电耦合的另一端子。 谐振电路将第二端子耦合到具有耦合在输出和地之间的电阻负载的输出端。 当晶体管导通时,第二端子接地,当晶体管截止时,从电源向第二端子的电流转向晶体管的内部电容,并使第二端子上的电压上升到最大值 值,然后减小,第二端子处的电压通过谐振电路耦合到输出端子。 在优选实施例中,晶体管包括化合物半导体场效应晶体管,其中第一端子是源极端子,第二端子是漏极端子。 场效应晶体管优选为化合物高电子迁移率晶体管(HEMT)或化合物MESFET,但在其它实施方案中,晶体管可以是化合物LDMOS,复合双极晶体管或复合MOSFET。

    High power Doherty amplifier using multi-stage modules
    2.
    发明授权
    High power Doherty amplifier using multi-stage modules 有权
    大功率Doherty放大器采用多级模块

    公开(公告)号:US07193473B2

    公开(公告)日:2007-03-20

    申请号:US11090577

    申请日:2005-03-24

    IPC分类号: H03F3/68

    CPC分类号: H03F1/0288

    摘要: A high power Doherty RF amplifier utilizes multi-stage amplifier modules for both the main amplifier and the peak amplifiers. In one embodiment of a two way two stage amplifier, the first stage of each amplifier module can include signal pre-distortion whereby the first stage compensates for distortion in both the first and second stages. The design is simple and results in a high efficiency amplifier with high gain. In one embodiment, a commercially available CREE PFM19030SM power module is used in both the main amplifier and the peak amplifier.

    摘要翻译: 高功率Doherty RF放大器利用主放大器和峰值放大器的多级放大器模块。 在双向两级放大器的一个实施例中,每个放大器模块的第一级可以包括信号预失真,由此第一级补偿第一级和第二级的失真。 设计简单,产生了高增益的高效率放大器。 在一个实施例中,市售的CREE PFM19030SM功率模块用于主放大器和峰值放大器。

    Low noise mixer circuit having passive inductor elements
    3.
    发明授权
    Low noise mixer circuit having passive inductor elements 失效
    低噪声混频器电路具有无源电感元件

    公开(公告)号:US5884154A

    公开(公告)日:1999-03-16

    申请号:US672486

    申请日:1996-06-26

    摘要: A mixer circuit is provided which incorporates inductive elements for low voltage applications. The circuit consists of a balanced amplifier and a switch composed of transistor pairs driven by a local oscillator signal for multiplying the signal to produce a circuit output signal having a predetermined intermediate frequency. Inductors are used to provide degenerative feedback in the balanced amplifier portion of the circuit. The inductors generate negligible noise and produce a negligible dc voltage drop. The transistors in the circuit are thereby maintained in saturation regions of operation as desired. In accordance with another aspect of the invention, an inductor or, alternatively, a parallel inductor-capacitor circuit, is used as a constant current source in conjunction with the input transistors in the balanced amplifier portion of the circuit.

    摘要翻译: 提供了一种混合电路,其中包含用于低电压应用的电感元件。 电路由平衡放大器和由本机振荡器信号驱动的晶体管组构成的开关构成,用于对信号进行乘法,以产生具有预定中间频率的电路输出信号。 电感器用于在电路的平衡放大器部分中提供退化反馈。 电感器产生可忽略的噪声并产生可忽略的直流电压降。 因此,电路中的晶体管因此被保持在饱和的操作区域中。 根据本发明的另一方面,电感器或可替代地,并联电感器 - 电容器电路被用作与电路的平衡放大器部分中的输入晶体管一起的恒流源。

    High efficiency switch-mode power amplifier
    4.
    发明授权
    High efficiency switch-mode power amplifier 有权
    高效率开关模式功率放大器

    公开(公告)号:US07518451B2

    公开(公告)日:2009-04-14

    申请号:US11767240

    申请日:2007-06-22

    IPC分类号: H03F3/217

    摘要: A switch mode power amplifier includes a transistor responsive to input signals above 1.0 GHz and which includes one terminal coupled to ground and another terminal conductively coupled to a power source. A resonant circuit coupled the second terminal to an output with a resistive load coupled across the output and ground. When the transistor is turned on the second terminal is coupled to ground and when the transistor is turned off, current from the power supply to the second terminal is steered into internal capacitance of the transistor and causes voltage on the second terminal to rise to a maximum value and then decrease, the voltage at the second terminal being coupled to the output terminal through the resonant circuit. In preferred embodiments, the transistor comprises a compound semiconductor field effect transistor with the first terminal being a source terminal and the second terminal being a drain terminal. The field effect transistor is preferably a compound high electron mobility transistor (HEMT) or compound MESFET, but in other embodiments the transistor can be the compound LDMOS, compound bipolar transistor, or compound MOSFET.

    摘要翻译: 开关模式功率放大器包括响应于1.0GHz以上的输入信号的晶体管,其包括耦合到地的一个端子和与电源导电耦合的另一端子。 谐振电路将第二端子耦合到具有耦合在输出和地之间的电阻负载的输出端。 当晶体管导通时,第二端子接地,当晶体管截止时,从电源向第二端子的电流转向晶体管的内部电容,并使第二端子上的电压上升到最大值 值,然后减小,第二端子处的电压通过谐振电路耦合到输出端子。 在优选实施例中,晶体管包括化合物半导体场效应晶体管,其中第一端子是源极端子,第二端子是漏极端子。 场效应晶体管优选为化合物高电子迁移率晶体管(HEMT)或化合物MESFET,但在其它实施方案中,晶体管可以是化合物LDMOS,复合双极晶体管或复合MOSFET。

    Plural band converter
    5.
    发明授权
    Plural band converter 失效
    多频段转换器

    公开(公告)号:US5898913A

    公开(公告)日:1999-04-27

    申请号:US845749

    申请日:1997-04-25

    IPC分类号: H03D7/12 H03D7/14 H04B1/28

    摘要: A frequency converter employs a balanced bridge mixer of switching elements such as field-effect transistors (FETs) with a local oscillator supplying control signals to gate terminals of the transistors. A carrier at intermediate frequency (IF) or at radio frequency (RF) is modulated for communication of data, and is applied to alternate nodes of the bridge. The remaining bridge nodes supply output signals to respective branches of an output circuit. Each branch of the output circuit is provided with a bandpass filter having a spectral characteristic corresponding to the spectral characteristic of a specific one of plural output signals to be outputted via the branch. Each branch may contain an active element, such as an amplifier, which is activated for outputting a signal, and which is deactivated for when node signal is to be outputted. A switchable impedance circuit is included within each of the branches to present a substantially constant impedance characteristic to the bridge, independently of whether the bridge amplifier is activated or deactivated. The local oscillator may provide plural frequencies, as by use of a variable-frequency oscillator or by use of plural oscillators, to place an output signal within the frequency band of a specific one of the output branches.

    摘要翻译: 变频器采用诸如场效应晶体管(FET)的开关元件的平衡桥式混频器,其中本地振荡器向晶体管的栅极端子提供控制信号。 中频(IF)或射频(RF)的载波被调制用于数据通信,并被应用于桥的备用节点。 剩余的桥接节点向输出电路的各个分支提供输出信号。 输出电路的每个分支都具有带通滤波器,该带通滤波器具有对应于要通过分支输出的多个输出信号中的特定一个的频谱特性的频谱特性。 每个分支可以包含有源元件,例如放大器,其被激活用于输出信号,并且当节点信号被输出时被去激活。 每个分支中包括可切换阻抗电路,以向桥提供基本上恒定的阻抗特性,而不管桥式放大器是启动还是停用。 本地振荡器可以通过使用可变频率振荡器或通过使用多个振荡器来提供多个频率,以将输出信号放置在特定一个输出分支的频带内。

    High-performance package for monolithic microwave integrated circuits
    6.
    发明授权
    High-performance package for monolithic microwave integrated circuits 失效
    用于单片微波集成电路的高性能封装

    公开(公告)号:US4901041A

    公开(公告)日:1990-02-13

    申请号:US251446

    申请日:1988-09-30

    IPC分类号: H01L23/66 H01P1/203 H01P5/08

    摘要: The present invention incorporates a specially-designed low-pass filter into the feedthrough of a monolithic microwave integrated circuit (MMIC) to provide compensation for discrepancies from the impedance required for an MMIC package to be matched to a transmission line. The compensation allows all parameters to be adjusted and the complete filter to be printed.The main features of the invention include minimum width for the under-wall conductor and brazing metallization, two open-circuited stubs at the package-die interface for wire bonding ease, and metal-filled vias connecting the ground plane base and the lid sealing ring to bring the lid sealing ring to RF ground.The present ivention also includes a method for designing the desired feedthrough that obviates the need for scale-model feedthrough design before printing, a prior art method that requires precision in the scale model. An electrical model of a feedthrough is first derived. The electrical model is then adjsuted according to the parameters desired for a new, compensated feedthrough using any known method, including software such as Touchstone. Finally, the new feedthrough is fabricated based upon the adjusted electrical model.

    摘要翻译: 本发明将专门设计的低通滤波器结合到单片微波集成电路(MMIC)的馈通中,以提供对于与传输线匹配的MMIC封装所需的阻抗的差异的补偿。 补偿允许调整所有参数并打印完整的过滤器。 本发明的主要特征包括底壁导体的最小宽度和钎焊金属化,用于引线接合的封装 - 模具界面处的两个开路短路以及连接接地平面基座和盖子密封环的金属填充通孔 将盖子密封环带到RF地面。 本申请还包括一种用于设计期望馈通的方法,其消除了在印刷之前对刻度模型馈通设计的需要,需要在刻度模型中精度的现有技术方法。 首先导出馈通的电气模型。 然后,使用任何已知的方法(包括诸如Touchstone等软件),根据新的补偿馈通所需的参数来调整电气模型。 最后,新的馈通是根据经调整的电气模型制造的。