公开(公告)号：US09806217B2

公开(公告)日：2017-10-31

申请号：US14701273

申请日：2015-04-30

申请人： William Marsh Rice University

发明人： Bob Yi Zheng ,  Yumin Wang ,  Nancy J. Halas ,  Peter Nordlander

IPC分类号： H01L31/0232 ,  H01L31/108 ,  H01L31/18

CPC分类号： H01L31/1085 ,  H01L31/02327 ,  H01L31/18

摘要： A metal-semiconductor-metal photodetecting device and method of manufacturing a metal-semiconductor-metal photodetecting device that includes a p-type silicon substrate with an oxide layer disposed on the p-type silicon substrate. Schotty junctions are disposed adjacent to the oxide layer on the p-type silicon substrate and a plasmonic grating disposed on the oxide layer. The plasmonic grating provides wavelength range selectability for the photodetecting device.

公开(公告)号：US20150318415A1

公开(公告)日：2015-11-05

申请号：US14701273

申请日：2015-04-30

申请人： William Marsh Rice University

发明人： Bob Yi Zheng ,  Yumin Wang ,  Naomi J. Halas ,  Peter Nordlander

IPC分类号： H01L31/0232 ,  H01L31/18 ,  H01L31/108

CPC分类号： H01L31/1085 ,  H01L31/02327 ,  H01L31/18

摘要： A metal-semiconductor-metal photodetecting device and method of manufacturing a metal-semiconductor-metal photodetecting device that includes a p-type silicon substrate with an oxide layer disposed on the p-type silicon substrate. Schotty junctions are disposed adjacent to the oxide layer on the p-type silicon substrate and a plasmonic grating disposed on the oxide layer. The plasmonic grating provides wavelength range selectability for the photodetecting device.

摘要翻译： 一种金属 - 半导体 - 金属光电探测器件及其制造方法，该金属 - 半导体 - 金属光电探测器件包括具有设置在p型硅衬底上的氧化物层的p型硅衬底。 散射结设置在邻近p型硅衬底上的氧化物层和设置在氧化物层上的等离子体激元光栅上。 等离子体激光光栅为光电检测装置提供波长范围选择性。