公开(公告)号：US4693380A

公开(公告)日：1987-09-15

申请号：US943888

申请日：1986-12-19

申请人： William Muth

发明人： William Muth

IPC分类号： A47B96/06 ,  A47F7/08

CPC分类号： A47B96/061 ,  A47F7/08 ,  Y10T403/7141 ,  Y10T403/7176

摘要： A support member for an inclined open mesh or wire type shelf that can be spaced anywhere along a wall and shelf area to provide support for the inclined shelf. The support is a one piece molded structure having a T-type cross-section with the shank having curved lower and upper ends with those curves providing about a 60.degree. angle of inclination for the shelf. One end includes a flat surface for engaging the wall with the other end including a forwardly directed groove for receiving a crosswise support in the middle of the shelf and a pair of grooves extending perpendicular to that forwardly directed groove sized so that that end of the support can snap in place between two stringers within the shelf structure.

摘要翻译： 用于倾斜的开放式网状物或线型搁架的支撑构件，其可以沿着墙壁和搁架区域任何地方间隔开，以便为斜架提供支撑。 该支撑件是具有T型横截面的单件式模制结构，该柄具有弯曲的下端和上端，这些曲线为搁架提供约60°的倾斜角度。 一端包括用于与另一端接合壁的平坦表面，该平坦表面包括用于在搁架的中间接收横向支撑的向前指向的槽，以及垂直于该向前定向的槽延伸的一对槽，其尺寸使得支撑件 可以在搁板结构内的两个桁条之间卡入到位。

公开(公告)号：US08514374B2

公开(公告)日：2013-08-20

申请号：US12611947

申请日：2009-11-04

申请人： Todd C. Bailey ,  William Chu ,  William Muth

发明人： Todd C. Bailey ,  William Chu ,  William Muth

IPC分类号： G01B11/00 ,  G03B27/32 ,  G03B27/42

CPC分类号： G03F7/70458 ,  G03F9/7088

摘要： A method provides improved alignment for a photolithographic exposure. In such method, a first exposure tool and a first chuck used in a reference photolithographic exposure of a first material layer on a substrate can be identified. The substrate typically includes at least a semiconductor layer. The first chuck typically is one of a plurality of chucks usable with the first exposure tool. The method may further include identifying a second exposure tool and a second chuck used in a current photolithographic exposure of a second material layer on the substrate. In one embodiment, alignment correction information specific to each of the identified first exposure tool, the first chuck, the second exposure tool and the second chuck can be used in aligning the semiconductor substrate to a second exposure tool and a second chuck. In one embodiment, such method can compensate for alignment error caused by differences between the first and second exposure tools, between the first and second chucks, or between the first and second exposure tools and between the first and second chucks.

摘要翻译： 一种方法提供了用于光刻曝光的改进的对准。 在这种方法中，可以识别在基板上的第一材料层的参考光刻曝光中使用的第一曝光工具和第一卡盘。 衬底通常包括至少一个半导体层。 第一卡盘通常是可用于第一曝光工具的多个卡盘之一。 该方法还可以包括识别在基板上的第二材料层的当前光刻曝光中使用的第二曝光工具和第二卡盘。 在一个实施例中，可以使用特定于所识别的第一曝光工具，第一卡盘，第二曝光工具和第二卡盘中的每一个的对准校正信息，以将半导体基板对准第二曝光工具和第二卡盘。 在一个实施例中，这种方法可以补偿由第​​一和第二曝光工具之间，第一和第二卡盘之间或第一和第二曝光工具之间以及第一和第二卡盘之间的差异引起的对准误差。

公开(公告)号：US20110102760A1

公开(公告)日：2011-05-05

申请号：US12611947

申请日：2009-11-04

申请人： Todd C. Bailey ,  William Chu ,  William Muth

发明人： Todd C. Bailey ,  William Chu ,  William Muth

IPC分类号： G03B27/58 ,  G01B11/00

CPC分类号： G03F7/70458 ,  G03F9/7088

摘要： A method provides improved alignment for a photolithographic exposure. In such method, a first exposure tool and a first chuck used in a reference photolithographic exposure of a first material layer on a substrate can be identified. The substrate typically includes at least a semiconductor layer. The first chuck typically is one of a plurality of chucks usable with the first exposure tool. The method may further include identifying a second exposure tool and a second chuck used in a current photolithographic exposure of a second material layer on the substrate. In one embodiment, alignment correction information specific to each of the identified first exposure tool, the first chuck, the second exposure tool and the second chuck can be used in aligning the semiconductor substrate to a second exposure tool and a second chuck. In one embodiment, such method can compensate for alignment error caused by differences between the first and second exposure tools, between the first and second chucks, or between the first and second exposure tools and between the first and second chucks.

摘要翻译： 一种方法提供了用于光刻曝光的改进的对准。 在这种方法中，可以识别在基板上的第一材料层的参考光刻曝光中使用的第一曝光工具和第一卡盘。 衬底通常包括至少一个半导体层。 第一卡盘通常是可用于第一曝光工具的多个卡盘之一。 该方法还可以包括识别在基板上的第二材料层的当前光刻曝光中使用的第二曝光工具和第二卡盘。 在一个实施例中，可以使用特定于所识别的第一曝光工具，第一卡盘，第二曝光工具和第二卡盘中的每一个的对准校正信息，以将半导体基板对准第二曝光工具和第二卡盘。 在一个实施例中，这种方法可以补偿由第​​一和第二曝光工具之间，第一和第二卡盘之间或第一和第二曝光工具之间以及第一和第二卡盘之间的差异引起的对准误差。