-
公开(公告)号:US10317296B2
公开(公告)日:2019-06-11
申请号:US14988747
申请日:2016-01-06
发明人: Chien-Chang Chen , Horng-Shing Lu
摘要: A method for estimating stress of an electronic component. An electronic component including first and second elements and conductive bumps is provided. Each conductive bump has two surfaces connected to the first and second elements respectively. Two adjacent conductive bumps have a pitch therebetween. The conductive bumps includes a first conductive bump and second conductive bumps. A stress value of the first conductive bump related to a testing parameter is calculated. A stress value of each second conductive bump related to the testing parameter is calculated according to a first calculating formula. The first calculating formula is σ 2 = L D - 2 r σ 1 , σ2 is the stress of each second conductive bump, L is a beeline distance between each second conductive bump and the first conductive bump, D is an average value of the pitches of the conductive bumps, r is a radius of each surface, and σ1 is the stress value of the first conductive bump.
-
公开(公告)号:US20160379905A1
公开(公告)日:2016-12-29
申请号:US14988747
申请日:2016-01-06
发明人: Chien-Chang Chen , Horng-Shing Lu
摘要: A method for estimating stress of an electronic component. An electronic component including first and second elements and conductive bumps is provided. Each conductive bump has two surfaces connected to the first and second elements respectively. Two adjacent conductive bumps have a pitch therebetween. The conductive bumps includes a first conductive bump and second conductive bumps. A stress value of the first conductive bump related to a testing parameter is calculated. A stress value of each second conductive bump related to the testing parameter is calculated according to a first calculating formula. The first calculating formula is σ 2 = L D - 2 r σ 1 , σ2 is the stress of each second conductive bump, L is a beeline distance between each second conductive bump and the first conductive bump, D is an average value of the pitches of the conductive bumps, r is a radius of each surface, and σ1 is the stress value of the first conductive bump.
摘要翻译: σ2是每个第二导电凸块的应力,L是每个第二导电凸块和第一导电凸块之间的直线距离,D是导电凸块的间距的平均值,r是每个表面的半径,σ1是 第一导电凸块的应力值。
-