公开(公告)号：US20210225639A1

公开(公告)日：2021-07-22

申请号：US17033695

申请日：2020-09-26

Applicant: Winbond Electronics Corp.

Inventor： Tsung-Wei Lin ,  Kun-Che Wu ,  Chun-Sheng Wu

IPC: H01L21/027

Abstract: A manufacturing method of a semiconductor device includes forming a hard mask layer and a photoresist on a substrate having a layer to be etched, and performing exposure and development such that the patterned photoresist has first trenches and to expose the hard mask layer, wherein ends of the first trenches have a width gradually decreased toward an end point. The exposed hard mask layer is removed using the patterned photoresist to transfer the pattern of the first trenches to the hard mask layer such that the patterned hard mask layer has second trenches, and the ends of the second trenches have a width gradually decreased toward an end point. Spacers are formed on inner walls of the second trenches. The hard mask layer is removed such that the layer to be etched is exposed. The exposed layer to be etched is removed using the spacers as an etch mask.

公开(公告)号：US11545360B2

公开(公告)日：2023-01-03

申请号：US17033695

申请日：2020-09-26

Applicant: Winbond Electronics Corp.

Inventor： Tsung-Wei Lin ,  Kun-Che Wu ,  Chun-Sheng Wu

IPC: H01L21/027

Abstract: A manufacturing method of a semiconductor device includes forming a hard mask layer and a photoresist on a substrate having a layer to be etched, and performing exposure and development such that the patterned photoresist has first trenches and to expose the hard mask layer, wherein ends of the first trenches have a width gradually decreased toward an end point. The exposed hard mask layer is removed using the patterned photoresist to transfer the pattern of the first trenches to the hard mask layer such that the patterned hard mask layer has second trenches, and the ends of the second trenches have a width gradually decreased toward an end point. Spacers are formed on inner walls of the second trenches. The hard mask layer is removed such that the layer to be etched is exposed. The exposed layer to be etched is removed using the spacers as an etch mask.

公开(公告)号：US11515252B2

公开(公告)日：2022-11-29

申请号：US17345391

申请日：2021-06-11

Applicant: Winbond Electronics Corp.

Inventor： Tsung-Wei Lin ,  Chun-Yen Liao ,  Chun-Sheng Wu

IPC: H01L21/00 ,  H01L23/528 ,  H01L21/768

Abstract: A word line layout includes a substrate, a first word line group, a second word line group, and an I-shaped third word line. The first word line group is disposed on the substrate and includes a plurality of L-shaped first word lines, and each of the first word lines has a first segment and a second segment connected to each other. The second word line group is disposed on the substrate and includes a plurality of L-shaped second word lines, and each of the second word lines has a first segment and a second segment connected to each other. The first word line group and the second word line group are arranged in juxtaposition and symmetric to each other. The I-shaped third word line is disposed on the outer side of the first word line group and the second word line group.

公开(公告)号：US11798185B2

公开(公告)日：2023-10-24

申请号：US17209741

申请日：2021-03-23

Applicant: Winbond Electronics Corp.

Inventor： Tung-Yu Wu ,  Chun-Yen Liao ,  Chun-Sheng Wu ,  Kao-Tsair Tsai ,  Chao-Yi Huang

IPC: G06T7/60 ,  G06T7/11 ,  G06T5/00 ,  G06T7/73 ,  G06N3/04 ,  G06N3/08

CPC classification number: G06T7/60 ,  G06N3/04 ,  G06N3/08 ,  G06T5/002 ,  G06T7/11 ,  G06T7/73 ,  G06T2207/10061 ,  G06T2207/20021 ,  G06T2207/20081 ,  G06T2207/20084 ,  G06T2207/30148

Abstract: An image analysis method is provided. In the image analysis method, a to-be analyzed image is inputted into a region-based convolutional neural network (RCNN) model to obtain a masked image outputted from the RCNN. The center of a masked object in the masked image is calculated. The center is regarded as an origin of coordinate and the farthest coordinate point from the origin of coordinate in each of the four quadrants relative to the origin of coordinate are searched. The image analysis block is generated for each of the farthest coordinate points. The post-processing is performed on the image analysis blocks to obtain an object range.

公开(公告)号：US20230325641A1

公开(公告)日：2023-10-12

申请号：US17715947

申请日：2022-04-07

Applicant: Winbond Electronics Corp.

Inventor： Tung-Yu Wu ,  Chun-Yen Liao ,  Tsung-Wei Lin ,  Chun-Sheng Wu ,  Chao-Yi Huang ,  Yu Ming Li ,  Hung-Fei Kuo

IPC: G06N3/04 ,  G03F7/20

CPC classification number: G06N3/0472 ,  G03F7/70491

Abstract: The invention provides a light source optimization apparatus including a storage apparatus and a processor. The storage apparatus stores a plurality of modules. The processor is coupled to the storage apparatus and configured to execute the plurality of modules. The plurality of modules include a critical pattern module and a light source optimization module. The critical pattern module retrieves critical pattern data. The light source optimization module executes an ant colony optimization (ACO) algorithm according to a preset parameter to adjust an initial light source image to generate an output light source image, and the initial light source image corresponds to the critical pattern data.