公开(公告)号：US10043972B2

公开(公告)日：2018-08-07

申请号：US15084149

申请日：2016-03-29

Applicant: Winbond Electronics Corp.

Inventor： Tseung-Yuen Tseng ,  Tsung-Ling Tsai ,  Fa-Shen Jiang

IPC: H01L45/00

CPC classification number: H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/128 ,  H01L45/146 ,  H01L45/1625

Abstract: A conductive-bridging random access memory is provided. The conductive-bridging random access memory includes a bottom electrode layer on a semiconductor substrate, an electrical resistance switching layer on the bottom electrode layer, a barrier layer on the electrical resistance switching layer, a top electrode layer on the barrier layer, and a high thermal-conductive material layer between the bottom electrode layer and the barrier layer. The high thermal-conductive material layer has a thermal conductivity in a range of 70-5000 W/mK.