公开(公告)号：US10043972B2

公开(公告)日：2018-08-07

申请号：US15084149

申请日：2016-03-29

Applicant: Winbond Electronics Corp.

Inventor： Tseung-Yuen Tseng ,  Tsung-Ling Tsai ,  Fa-Shen Jiang

IPC: H01L45/00

CPC classification number: H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/128 ,  H01L45/146 ,  H01L45/1625

Abstract: A conductive-bridging random access memory is provided. The conductive-bridging random access memory includes a bottom electrode layer on a semiconductor substrate, an electrical resistance switching layer on the bottom electrode layer, a barrier layer on the electrical resistance switching layer, a top electrode layer on the barrier layer, and a high thermal-conductive material layer between the bottom electrode layer and the barrier layer. The high thermal-conductive material layer has a thermal conductivity in a range of 70-5000 W/mK.

公开(公告)号：US20170040532A1

公开(公告)日：2017-02-09

申请号：US14977664

申请日：2015-12-22

Applicant: Winbond Electronics Corp.

Inventor： Tseung-Yuen Tseng ,  Shun-Li Lan ,  Hsiang-Yu Chang ,  Chun-An Lin

IPC: H01L45/00

CPC classification number: H01L45/122 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146

Abstract: A resistive random access memory (RRAM) including a substrate, a conductive layer, a resistive switching layer, a copper-containing oxide layer, and an electron supply layer is provided. The conductive layer is disposed on the substrate. The resistive switching layer is disposed on the conductive layer. The copper-containing oxide layer is disposed on the resistive switching layer. The electron supply layer is disposed on the copper-containing oxide layer.

Abstract translation: 提供了包括基板，导电层，电阻开关层，含铜氧化物层和电子供给层的电阻随机存取存储器（RRAM）。 导电层设置在基板上。 电阻开关层设置在导电层上。 含铜氧化物层设置在电阻式开关层上。 电子供给层设置在含铜氧化物层上。

公开(公告)号：US10181560B2

公开(公告)日：2019-01-15

申请号：US15868351

申请日：2018-01-11

Applicant: Winbond Electronics Corp.

Inventor： Tseung-Yuen Tseng ,  Chun-An Lin ,  Chu-Jie Huang ,  Guang-Jyun Dai

IPC: H01L29/861 ,  H01L29/18 ,  H01L45/00 ,  H01L21/06

Abstract: A conductive-bridging random access memory and a method for fabricating a conductive-bridging random access memory are provided. The conductive-bridging random access memory includes a bottom electrode layer on a semiconductor substrate, an electrical resistance switching layer on the bottom electrode layer, an electron-capturing layer on the electrical resistance switching layer, a barrier layer on the electron-capturing layer, an ion source layer on the barrier layer, and a top electrode layer on the ion source layer. The electron-capturing layer includes electron-capturing material, and the electron affinity of the electron-capturing material is at least 60 KJ/mole.