公开(公告)号：US10468100B1

公开(公告)日：2019-11-05

申请号：US16046966

申请日：2018-07-26

Applicant: Winbond Electronics Corp.

Inventor： Lih-Wei Lin ,  Yu-An Chen ,  Guan-Yi Li ,  Hsuan-Pao Tseng

IPC: G11C13/00 ,  H01L45/00

Abstract: The disclosure provides a detecting method for a resistive random access memory (RRAM) cell. The method includes: retrieving an RRAM cell and measuring a cell current of the RRAM cell; when a current value of the cell current is higher than a first threshold, performing at least one of a plurality of reset operations and a set operation to the RRAM cell and determining whether a resistance state of the RRAM cell has been switched after experiencing the at least one of the reset operations and the set operation. If no, a recovery operation is performed to the RRAM cell to recover the RRAM cell; if yes, the RRAM is determined to be in a healthy state.