公开(公告)号：US11289160B2

公开(公告)日：2022-03-29

申请号：US17067341

申请日：2020-10-09

Applicant: Winbond Electronics Corp.

Inventor： Lih-Wei Lin ,  Ju-Chieh Cheng ,  Lung-Chi Cheng ,  Ying-Shan Kuo ,  Yu-An Chen

IPC: G11C11/00 ,  G11C13/00

Abstract: A data writing method is provided. According to the present application, the data writing method includes steps of receiving an expected data, performing a plurality of readings on a target storage unit to obtain a plurality of read data; determining whether the plurality of read data are the same as the expected data respectively to generate a plurality of comparison results; and performing a writing operation procedure on the target storage unit according to the plurality of comparison results and the expected data.

公开(公告)号：US10468100B1

公开(公告)日：2019-11-05

申请号：US16046966

申请日：2018-07-26

Applicant: Winbond Electronics Corp.

Inventor： Lih-Wei Lin ,  Yu-An Chen ,  Guan-Yi Li ,  Hsuan-Pao Tseng

IPC: G11C13/00 ,  H01L45/00

Abstract: The disclosure provides a detecting method for a resistive random access memory (RRAM) cell. The method includes: retrieving an RRAM cell and measuring a cell current of the RRAM cell; when a current value of the cell current is higher than a first threshold, performing at least one of a plurality of reset operations and a set operation to the RRAM cell and determining whether a resistance state of the RRAM cell has been switched after experiencing the at least one of the reset operations and the set operation. If no, a recovery operation is performed to the RRAM cell to recover the RRAM cell; if yes, the RRAM is determined to be in a healthy state.

公开(公告)号：US20220344283A1

公开(公告)日：2022-10-27

申请号：US17586654

申请日：2022-01-27

Applicant: Winbond Electronics Corp.

Inventor： Chi-Ching Liu ,  Hsiu-Pin Chen ,  Sung-Ying Wen ,  Tso-Hua Hung ,  Yu-An Chen ,  Ming-Che Lin

IPC: H01L23/00 ,  H01L23/544 ,  H01L23/532

Abstract: A semiconductor structure serves to generate a physical unclonable function (PUF) code. The semiconductor structure includes a metal layer, N Titanium (Ti) structures, and N Titanium Nitride (Ti-N) structures, where N is a positive integer. The metal layer forms N metal structures. The Ti structures are respectively formed on one end of each metal structure. The Ti-N structures are respectively formed on top of the Ti structures. The metal structures and the corresponding Ti structures and the corresponding Ti-N structures respectively form a plurality of pillars. The pillars respectively provide a plurality of resistance values, and the resistance values serve to generate the PUF code.