公开(公告)号：US10783962B2

公开(公告)日：2020-09-22

申请号：US16105991

申请日：2018-08-21

Applicant: Winbond Electronics Corp.

Inventor： Lih-Wei Lin ,  Lung-Chi Cheng ,  Min-Yen Liu ,  Huan-Ming Chiang

IPC: G11C13/00 ,  H01L45/00

Abstract: A writing method of a resistive memory storage apparatus includes: applying one of a set voltage and a reset voltage serving as a first selected voltage to a memory cell and obtaining a first read current; applying a disturbance voltage to the memory cell and obtaining a second read current; and determining whether a relationship between the first and second read currents satisfies a preset relationship, and if not, applying the other of the set voltage and the reset voltage serving as a second selected voltage to the memory cell and applying the first selected voltage to the memory cell again. A polarity of the disturbance voltage is different from that of the first selected voltage, and the absolute value of the disturbance voltage is less than that of the second selected voltage. A resistive memory storage apparatus is also provided.

公开(公告)号：US20190074059A1

公开(公告)日：2019-03-07

申请号：US16105991

申请日：2018-08-21

Applicant: Winbond Electronics Corp.

Inventor： Lih-Wei Lin ,  Lung-Chi Cheng ,  Min-Yen Liu ,  Huan-Ming Chiang

IPC: G11C13/00 ,  H01L45/00

Abstract: A writing method of a resistive memory storage apparatus includes: applying one of a set voltage and a reset voltage serving as a first selected voltage to a memory cell and obtaining a first read current of the memory cell; applying a disturbance voltage to the memory cell and obtaining a second read current of the memory cell; and determining whether a relationship between the first and second read currents satisfies a preset relationship, and if not, applying the other of the set voltage and the reset voltage serving as a second selected voltage to the memory cell and applying the first selected voltage to the memory cell again. A polarity of the disturbance voltage is different from that of the second selected voltage, and the absolute value of the disturbance voltage is less than that of the second selected voltage. A resistive memory storage apparatus is also provided.