公开(公告)号：US09627059B2

公开(公告)日：2017-04-18

申请号：US14977667

申请日：2015-12-22

Applicant: Winbond Electronics Corp.

Inventor： Lih-Wei Lin ,  I-Hsien Tseng ,  Ju-Chieh Cheng ,  Chia-Hung Lin ,  Tsung-Huan Tsai ,  Po-Wei Huang

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0097 ,  G11C2013/0078 ,  G11C2013/0083 ,  G11C2213/79 ,  G11C2213/82

Abstract: A resistive memory and a data writing method for a resistive memory cell thereof are provided. The method includes: receiving and decoding a column address signal for generating a decoded result, and providing a word line voltage to a word line of the resistive memory cell; providing a constant current to one of a bit line and a source line of the resistive memory cell, and coupling a reference ground voltage to another one of the bit line and the source line of the resistive memory cell.

公开(公告)号：US20160276027A1

公开(公告)日：2016-09-22

申请号：US14977667

申请日：2015-12-22

Applicant: Winbond Electronics Corp.

Inventor： Lih-Wei Lin ,  I-Hsien Tseng ,  Ju-Chieh Cheng ,  Chia-Hung Lin ,  Tsung-Huan Tsai ,  Po-Wei Huang

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0097 ,  G11C2013/0078 ,  G11C2013/0083 ,  G11C2213/79 ,  G11C2213/82

Abstract: A resistive memory and a data writing method for a resistive memory cell thereof are provided. The method includes: receiving and decoding a column address signal for generating a decoded result, and providing a word line voltage to a word line of the resistive memory cell; providing a constant current to one of a bit line and a source line of the resistive memory cell, and coupling a reference ground voltage to another one of the bit line and the source line of the resistive memory cell.

Abstract translation: 提供了一种用于其电阻式存储单元的电阻式存储器和数据写入方法。 该方法包括：接收和解码用于产生解码结果的列地址信号，并将字线电压提供给电阻存储器单元的字线; 向电阻存储单元的位线和源极线之一提供恒定电流，以及将参考接地电压耦合到电阻存储单元的位线和源极线中的另一个。