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公开(公告)号：US09275738B2
公开(公告)日：2016-03-01
申请号：US14697148
申请日：2015-04-27
发明人： Jongjun Kim , Eungjoon Park
摘要： A flash memory device may operate from two supply voltages, one being provided externally, and the other being generated within the flash memory device from the external supply voltage. The flash memory device may be provided with a selectable-level buffer for interfacing with either low supply voltage or high supply voltage integrated circuits. To provide even greater flexibility, the flash memory device may be provided with the capability of receiving a second supply voltage from an external source, which may take precedence over the internally-generated second supply voltage or may be combined with the internally-generated second supply voltage.
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公开(公告)号：US20140328126A1
公开(公告)日：2014-11-06
申请号：US13875760
申请日：2013-05-02
发明人： Jongjun Kim , Eungjoon Park
IPC分类号： G11C16/06
摘要： A flash memory device may operate from two supply voltages, one being provided externally, and the other being generated within the flash memory device from the external supply voltage. The flash memory device may be provided with a selectable-level buffer for interfacing with either low supply voltage or high supply voltage integrated circuits. To provide even greater flexibility, the flash memory device may be provided with the capability of receiving a second supply voltage from an external source, which may take precedence over the internally-generated second supply voltage or may be combined with the internally-generated second supply voltage.
摘要翻译： 闪存器件可以从两个电源电压操作，一个从外部提供，另一个从外部电源电压在闪存器件内产生。 闪存器件可以设置有用于与低电源电压或高电源电压集成电路接口的可选级缓冲器。 为了提供更大的灵活性，闪存器件可以具有从外部源接收第二电源电压的能力，其可以优先于内部产生的第二电源电压，或者可以与内部产生的第二电源 电压。
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公开(公告)号：US09042172B2
公开(公告)日：2015-05-26
申请号：US13875760
申请日：2013-05-02
发明人： Jongjun Kim , Eungjoon Park
摘要： A flash memory device may operate from two supply voltages, one being provided externally, and the other being generated within the flash memory device from the external supply voltage. The flash memory device may be provided with a selectable-level buffer for interfacing with either low supply voltage or high supply voltage integrated circuits. To provide even greater flexibility, the flash memory device may be provided with the capability of receiving a second supply voltage from an external source, which may take precedence over the internally-generated second supply voltage or may be combined with the internally-generated second supply voltage.
摘要翻译： 闪存器件可以从两个电源电压操作，一个从外部提供，另一个从外部电源电压在闪存器件内产生。 闪存器件可以设置有用于与低电源电压或高电源电压集成电路接口的可选级缓冲器。 为了提供更大的灵活性，闪存器件可以具有从外部源接收第二电源电压的能力，其可以优先于内部产生的第二电源电压，或者可以与内部产生的第二电源 电压。
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公开(公告)号：US20150228342A1
公开(公告)日：2015-08-13
申请号：US14697148
申请日：2015-04-27
发明人： Jongjun Kim , Eungjoon Park
IPC分类号： G11C16/06
摘要： A flash memory device may operate from two supply voltages, one being provided externally, and the other being generated within the flash memory device from the external supply voltage. The flash memory device may be provided with a selectable-level buffer for interfacing with either low supply voltage or high supply voltage integrated circuits. To provide even greater flexibility, the flash memory device may be provided with the capability of receiving a second supply voltage from an external source, which may take precedence over the internally-generated second supply voltage or may be combined with the internally-generated second supply voltage.
摘要翻译： 闪存器件可以从两个电源电压操作，一个从外部提供，另一个从外部电源电压在闪存器件内产生。 闪存器件可以设置有用于与低电源电压或高电源电压集成电路接口的可选级缓冲器。 为了提供更大的灵活性，闪存器件可以具有从外部源接收第二电源电压的能力，其可以优先于内部产生的第二电源电压，或者可以与内部产生的第二电源 电压。
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