公开(公告)号：US11069390B2

公开(公告)日：2021-07-20

申请号：US16562538

申请日：2019-09-06

Applicant: Wisconsin Alumni Research Foundation

Inventor： Jiamian Hu ,  Minyi Dai

IPC: G11C11/16 ,  H01F10/32 ,  H01L43/10 ,  H01L27/22 ,  H01L43/02

Abstract: Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) cells that undergo perpendicular magnetization switching in the absence of an in-plane magnetic field and methods for their operation are provided. The SOT-MRAM cells use cobalt-iron-boron alloys, cobalt-iron alloys, metallic cobalt, and/or metallic iron as the ferromagnetic free layer in a magnetic tunnel junction. By designing the ferromagnetic layer with appropriate lateral dimensions and operating the SOT-MRAM cells with an appropriate charge current density, deterministic perpendicular magnetization switching is achieved without the need to apply an external in-plane bias collinear with the charge current.

公开(公告)号：US20210074344A1

公开(公告)日：2021-03-11

申请号：US16562538

申请日：2019-09-06

Applicant: Wisconsin Alumni Research Foundation

Inventor： Jiamian Hu ,  Minyi Dai

IPC: G11C11/16 ,  H01F10/32 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22

Abstract: Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) cells that undergo perpendicular magnetization switching in the absence of an in-plane magnetic field and methods for their operation are provided. The SOT-MRAM cells use cobalt-iron-boron alloys, cobalt-iron alloys, metallic cobalt, and/or metallic iron as the ferromagnetic free layer in a magnetic tunnel junction. By designing the ferromagnetic layer with appropriate lateral dimensions and operating the SOT-MRAM cells with an appropriate charge current density, deterministic perpendicular magnetization switching is achieved without the need to apply an external in-plane bias collinear with the charge current.