公开(公告)号：US20190013200A1

公开(公告)日：2019-01-10

申请号：US15643111

申请日：2017-07-06

Applicant: Wisconsin Alumni Research Foundation

Inventor： Max G. Lagally ,  Thomas Francis Kuech ,  Yingxin Guan ,  Shelley A. Scott ,  Abhishek Bhat ,  Xiaorui Cui

IPC: H01L21/02 ,  H01L21/78 ,  C30B29/52 ,  C30B25/02 ,  C30B29/08 ,  C30B29/68

Abstract: High-quality, single-crystalline silicon-germanium (Si(1-x)Gex) having a high germanium content is provided. Layers of the high-quality, single-crystalline silicon-germanium can be grown to high sub-critical thicknesses and then released from their growth substrates to provide Si(1-x)Gex films without lattice mismatch-induced misfit dislocations or a mosaic distribution of crystallographic orientations.

公开(公告)号：US10176991B1

公开(公告)日：2019-01-08

申请号：US15643111

申请日：2017-07-06

Applicant: Wisconsin Alumni Research Foundation

Inventor： Max G. Lagally ,  Thomas Francis Kuech ,  Yingxin Guan ,  Shelley A. Scott ,  Abhishek Bhat ,  Xiaorui Cui

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/78 ,  C30B29/52 ,  C30B25/02 ,  C30B29/08 ,  C30B29/68 ,  H01L31/0352 ,  H01L31/109 ,  H01L31/18 ,  H01L29/165 ,  H01L29/737 ,  H01L29/778

Abstract: High-quality, single-crystalline silicon-germanium (Si(1-x)Gex) having a high germanium content is provided. Layers of the high-quality, single-crystalline silicon-germanium can be grown to high sub-critical thicknesses and then released from their growth substrates to provide Si(1-x)Gex films without lattice mismatch-induced misfit dislocations or a mosaic distribution of crystallographic orientations.