摘要:
A method for characterizing and simulating a CMP process, in which a substrate to be polished, in particular a semiconductor wafer, is pressed onto a polishing cloth and is rotated relative to the latter for a defined polishing time. The method includes defining a set of process parameters, in particular a compressive force and a relative rotational speed between a substrate and polishing cloth; preparing and characterizing a test substrate having test patterns with different structure densities using the defined process parameters; determining a set of model parameters for simulating the CMP process from results of the characterization of the test substrate; determining layout parameters of the substrate which is to be polished; defining a profile of demands for a CMP process result for the substrate to be polished; and simulating the CMP process in order to determine the polishing time required to satisfy the profile of demands.
摘要:
An apparatus for polishing wafers includes a polishing table with a heating device. A conduit connects a tank holding a liquid polishing agent to a distributor for feeding the liquid polishing agent to the polishing table. A heat exchanger is disposed along the conduit between the tank and the distributor for heating the liquid polishing agent. The heat exchanger is independent of said heating device. A method for heating a polishing agent is also provided.