公开(公告)号：US06257955B1

公开(公告)日：2001-07-10

申请号：US09515176

申请日：2000-02-29

申请人： Götz Springer ,  Wolfgang Diewald ,  Andre Richter

发明人： Götz Springer ,  Wolfgang Diewald ,  Andre Richter

IPC分类号： B24B4900

CPC分类号： B24B37/015 ,  B24B57/02 ,  F28D7/024 ,  F28F9/0132

摘要： An apparatus for polishing wafers includes a polishing table with a heating device. A conduit connects a tank holding a liquid polishing agent to a distributor for feeding the liquid polishing agent to the polishing table. A heat exchanger is disposed along the conduit between the tank and the distributor for heating the liquid polishing agent. The heat exchanger is independent of said heating device. A method for heating a polishing agent is also provided.

摘要翻译： 抛光晶片的装置包括具有加热装置的抛光台。 导管将容纳液体抛光剂的罐连接到分配器，以将液体抛光剂供给到抛光台。 沿着罐和分配器之间的导管设置热交换器以加热液体抛光剂。 热交换器独立于所述加热装置。 还提供了一种加热抛光剂的方法。

公开(公告)号：US06436281B2

公开(公告)日：2002-08-20

申请号：US09829871

申请日：2001-04-10

申请人： Jürgen Hammer ,  Andre Richter ,  Werner Kraus ,  Heinz-Dieter Petermann

发明人： Jürgen Hammer ,  Andre Richter ,  Werner Kraus ,  Heinz-Dieter Petermann

IPC分类号： B01D3602

CPC分类号： B01D61/145 ,  B01D61/025 ,  B01D61/027 ,  B01D61/22 ,  B01D61/58 ,  C02F1/441 ,  C02F1/442 ,  C02F1/444

摘要： Wastewater from a chemical-mechanical polishing process (CMP) used in semiconductor chip fabrication has hitherto been, and is still being, discharged into the public sewage system after chemical neutralization and sedimentation. This has the drawback that water consumption is considerable. It is therefore an object of the invention to reduce the total amount of wastewater produced that has to be discharged. This is achieved by the wastewater to be treated being subjected to an ultra-filtration. This allows the treated CMP wastewater to be reused within the plant. In particular, it can be recycled in order again to recover therefrom deionized water of a very high purity for operational purposes, e.g. for CMP.

摘要翻译： 化学中和沉淀后，半导体芯片制造中使用的化学机械抛光工艺（CMP）的废水至今已经并仍在排入公共污水系统。 这具有耗水量相当大的缺点。 因此，本发明的目的是减少必须排出的废水的总量。 这是通过待处理的废水进行超滤来实现的。 这样可以使经处理的CMP废水在工厂内重新使用。 特别地，为了操作目的，可以再次循环使用非常高纯度的去离子水来回收，例如， 用于CMP。

公开(公告)号：US09640486B2

公开(公告)日：2017-05-02

申请号：US12663890

申请日：2007-06-13

申请人： Andre Richter ,  Marcel Krenzin ,  Jens Moecke

发明人： Andre Richter ,  Marcel Krenzin ,  Jens Moecke

IPC分类号： G06K19/06 ,  H01L23/544 ,  B07C5/34 ,  G06K7/10 ,  H01L21/67

CPC分类号： H01L23/544 ,  H01L21/67282 ,  H01L2223/54413 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to a method for marking wafers, in particular wafers for solar cell production: The method comprises the steps of manufacturing a position line (21a, 21b, 21c) on a peripheral surface of a silicon ingot or column, the ingot or column extending in an axial direction and having a longitudinal axis in the axial direction, wherein the position line extends in the axial direction along substantially the whole ingot or column and is inclined with respect to the longitudinal axis. By this position line it is possible to determine the position of a wafer cut from the ingot or column within the ingot or column, respectively. Further, an individual identification pattern (20a, 20b, 20c) of lines on the peripheral surface of the silicon ingot or column is manufactured, the individual identification pattern of lines extending in axial direction over substantially the whole ingot or column and providing an individual coding which allows to identify the silicon ingot or column.

公开(公告)号：US20100237514A1

公开(公告)日：2010-09-23

申请号：US12663890

申请日：2007-06-13

申请人： Andre Richter ,  Marcel Krenzin ,  Jens Moecke

发明人： Andre Richter ,  Marcel Krenzin ,  Jens Moecke

IPC分类号： H01L23/544 ,  B05D5/00 ,  H01L31/18

CPC分类号： H01L23/544 ,  H01L21/67282 ,  H01L2223/54413 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to a method for marking wafers, in particular wafers for solar cell production: The method comprises the steps of manufacturing a position line (21a, 21b, 21c) on a peripheral surface of a silicon ingot or column, the ingot or column extending in an axial direction and having a longitudinal axis in the axial direction, wherein the position line extends in the axial direction along substantially the whole ingot or column and is inclined with respect to the longitudinal axis. By this position line it is possible to determine the position of a wafer cut from the ingot or column within the ingot or column, respectively. Further, an individual identification pattern (20a, 20b, 20c) of lines on the peripheral surface of the silicon ingot or column is manufactured, the individual identification pattern of lines extending in axial direction over substantially the whole ingot or column and providing an individual coding which allows to identify the silicon ingot or column.

摘要翻译： 本发明涉及一种用于标记晶片的方法，特别是用于太阳能电池生产的晶片的方法，该方法包括以下步骤：在硅锭或柱的外周表面上制造位置线（21a，21b，21c），所述锭或柱 沿轴向延伸并具有沿轴向的纵向轴线，其中所述位置线沿着基本上整个锭或柱的轴向方向延伸并且相对于纵向轴线倾斜。 通过该位置线，可以分别确定从铸块或柱子中切出的晶片的位置。 此外，制造硅锭或列的圆周表面上的线的单独识别图案（20a，20b，20c），在基本上整个锭或列上沿轴向延伸的线的单独识别图案，并提供单独的编码 这允许识别硅锭或色谱柱。

公开(公告)号：US06506306B1

公开(公告)日：2003-01-14

申请号：US09428582

申请日：1999-10-28

申请人： Jürgen Hammer ,  Andre Richter ,  Werner Kraus ,  Heinz-Dieter Petermann

发明人： Jürgen Hammer ,  Andre Richter ,  Werner Kraus ,  Heinz-Dieter Petermann

IPC分类号： B01D6100

CPC分类号： B01D61/145 ,  B01D61/025 ,  B01D61/027 ,  B01D61/22 ,  B01D61/58 ,  C02F1/441 ,  C02F1/442 ,  C02F1/444

摘要： Wastewater from a chemical-mechanical polishing process (CMP) used in semiconductor chip fabrication has hitherto been, and is still being, discharged into the public sewage system after chemical neutralization and sedimentation. This has the drawback that water consumption is considerable. It is therefore an object of the invention to reduce the total amount of wastewater produced that has to be discharged. This is achieved by the wastewater to be treated being subjected to an ultra-filtration, and at least one of NF an RO. This allows the treated CMP wastewater to be reused within the plant. In particular, it can be recycled in order again to recover therefrom deionized water of a very high purity for operational purposes, e.g. for CMP.

摘要翻译： 化学中和沉淀后，半导体芯片制造中使用的化学机械抛光工艺（CMP）的废水至今已经并仍在排入公共污水系统。 这具有耗水量相当大的缺点。 因此，本发明的目的是减少必须排出的废水的总量。 这是通过待处理的废水进行超滤，以及NF和RO中的至少一种来实现的。 这样可以使经处理的CMP废水在工厂内重新使用。 特别地，为了操作目的，可以再次循环使用非常高纯度的去离子水来回收，例如， 用于CMP。

公开(公告)号：US20130025673A1

公开(公告)日：2013-01-31

申请号：US13638491

申请日：2011-04-01

申请人： Egon Huebel ,  Andre Richter

发明人： Egon Huebel ,  Andre Richter

IPC分类号： H01L31/0224 ,  H01L31/18 ,  C25D17/00

CPC分类号： C25D5/028 ,  C25D17/06 ,  H01L31/0508 ,  H01L31/0521 ,  H01L31/1876 ,  H01L31/188 ,  Y02E10/50 ,  Y02P70/521

摘要： Solar cells, where at least one conductor is mechanically and electrically connected to the solar cell and/or further conductors by conductive cladding. The conductive cladding is preferably deposited electrolytically or galvanically from solution or is produced by plasma-spraying. In addition, methods for connecting solar cells by means of at least one conductor and/or for connecting conductors on solar cells, wherein at least one electrically-conductive conductor is mechanically and electrically connected by depositing conductive cladding from solution onto the solar cell and/or at least one conductor. Also, a device for depositing a mechanically-connecting and electrically-conductive cladding from solution onto solar cells in electrolytic cells, comprising means for receiving at least one conductor, preferably a collector or bus-bar conductor contacting surface to be deposited in the electrolyte of the electrolytic cell, preferably at least partially providing electrical contact with a seed-layer of the solar cell, and preferably simultaneously supporting the solar cell.

摘要翻译： 太阳能电池，其中至少一个导体通过导电包层机械地和电连接到太阳能电池和/或另外的导体。 导电包层优选地从溶液中电解或电镀沉积，或通过等离子体喷涂产生。 另外，通过至少一个导体和/或连接太阳能电池上的导体来连接太阳能电池的方法，其中至少一个导电导体通过将溶液中的导电包层沉积到太阳能电池上和/ 或至少一个导体。 另外，一种用于将溶液中的机械连接和导电包层从电解槽中的太阳能电池沉积的装置，包括用于接收至少一个导体，优选地将沉积在电解质中的集电极或汇流条导体接触表面的装置 电解槽优选地至少部分地提供与太阳能电池的种子层的电接触，并且优选地同时支撑太阳能电池。