公开(公告)号：US4015922A

公开(公告)日：1977-04-05

申请号：US658892

申请日：1976-02-18

申请人： Wolfgang Dietze ,  Ronrad Reuschel ,  Andreas Kasper

发明人： Wolfgang Dietze ,  Ronrad Reuschel ,  Andreas Kasper

IPC分类号： C23C16/01 ,  C23C16/22 ,  C30B23/00 ,  B29D23/00

CPC分类号： C23C16/22 ,  C23C16/01 ,  C30B23/00

摘要： For the manufacture of tubular bodies of semiconductor material, particularly of silicon, by the precipitation of a layer in the form of a hollow cylinder on a rod or tube-shaped,electrically heated carrier in a reaction gas suitable for the deposition of the semiconductor in question, with subsequent separation of the semiconductor layer from the carrier, the carrier is differentially heated in such a manner that the generated hollow-cylinder layer is given an annular, bead-like reinforcement; the separation of the tube obtained into parts is achieved by a cut made within the reinforcement.

摘要翻译： 对于制造半导体材料，特别是硅的管状体，通过将中空圆筒形式的层沉淀在适于半导体沉积的反应气体中的棒状或管状电加热载体上 问题是随着半导体层与载体的分离，载体以这样一种方式进行差分加热，使得产生的中空圆筒层具有环形的珠状加强件; 通过在加强件内部制成的切口来实现将获得的管分离成部分。