公开(公告)号：US4436578A

公开(公告)日：1984-03-13

申请号：US231028

申请日：1981-02-03

申请人： Wolfgang Keller ,  Gerhard Schrotter

发明人： Wolfgang Keller ,  Gerhard Schrotter

IPC分类号： C30B13/20 ,  C30B13/30 ,  H01L21/208

CPC分类号： C30B13/30 ,  C30B13/20 ,  Y10T117/1084

摘要： Method of setting a stable melting zone in a semiconductor crystalline rod during crucible-free zone melting thereof, by means of a single-winding induction heating coil having an inner diameter smaller than the diameter of a portion of the rod being fed to the melting zone which includes performing the crucible-free zone melting in an argon atmosphere at an overpressure in vicinity of at least 1.5 ata and maximally 6 ata, and setting the outer melting-zone height at a value of between 15 and 23 mm for a diameter of the recrystallized rod portion within a range of 30 to 50 mm, at a value of between 18 and 26 mm for a diameter of the recrystallized rod portion within a range of 50 to 75 mm and at a limiting value of 32 mm for a rod diameter greater than 75 mm.

摘要翻译： 在半导体晶体棒的无坩埚区熔化期间通过单个绕组的感应加热线圈设定稳定的熔融区域的方法，所述单绕组感应加热线圈的内径小于供给到熔融区域的棒的一部分的直径 其包括在氩气氛中在至少1.5ata和最大6ata附近的超压下进行无坩埚区熔化，并将外部熔融区高度设定在15和23mm之间，直径为 再结晶棒部分在30至50mm的范围内，对于直径为50至75mm的再结晶棒部分的直径为18至26mm，杆直径较大的极限值为32mm 超过75毫米。

公开(公告)号：US4012217A

公开(公告)日：1977-03-15

申请号：US629916

申请日：1975-11-07

申请人： Konrad Reuschel ,  Ulrich Rucha ,  Gerhard Schrotter

发明人： Konrad Reuschel ,  Ulrich Rucha ,  Gerhard Schrotter

IPC分类号： C01B33/035 ,  C23C16/22 ,  C03B23/06

CPC分类号： C01B33/035 ,  C23C16/22

摘要： A U-shaped carrier member formed out of a bent silicon starting rod which is uniformly heatable by means of electric current and which is substantially neither elongated nor contracted relative to the starting rod. A process for the preparation of such carrier member is provided.

摘要翻译： 由弯曲的硅起始杆形成的U形载体构件，其通过电流均匀地加热，并且基本上相对于起始杆基本上不伸长或收缩。 提供了制备这种载体构件的方法。