公开(公告)号：US07205205B2

公开(公告)日：2007-04-17

申请号：US10712464

申请日：2003-11-12

申请人： Won B. Bang ,  Yen-Kun Wang ,  Kevin Mikio Mukai ,  Theresa Marie O. Liu

发明人： Won B. Bang ,  Yen-Kun Wang ,  Kevin Mikio Mukai ,  Theresa Marie O. Liu

IPC分类号： H01L21/76

CPC分类号： H01L21/02129 ,  C23C16/4405 ,  C23C16/46 ,  H01J37/32862 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31625 ,  H01L21/76224

摘要： A method of operating a substrate processing chamber comprising transferring a first substrate into the substrate processing chamber and heating the substrate to a first temperature of at least 510° C.; depositing an insulating layer over the first substrate while reducing the temperature of the substrate from the first temperature to a second temperature that is lower than the first temperature; transferring the first substrate out of the substrate processing chamber; removing unwanted deposition material formed on interior surfaces of the chamber during the depositing step by introducing reactive halogen species into the chamber while increasing the temperature of chamber; transferring a second substrate into the substrate processing chamber and heating the substrate to the first temperature; and depositing an insulating layer over the second substrate while reducing the temperature of the substrate from the first temperature to the second temperature.

摘要翻译： 一种操作衬底处理室的方法，包括将第一衬底转移到衬底处理室中并将衬底加热至至少510℃的第一温度; 在第一衬底上沉积绝缘层，同时将衬底的温度从第一温度降低到低于第一温度的第二温度; 将所述第一衬底转移出所述衬底处理室; 在沉积步骤期间，通过将反应性卤素物质引入室中，同时增加室的温度来除去在室的内表面上形成的不需要的沉积材料; 将第二衬底转移到衬底处理室中并将衬底加热到​​第一温度; 以及在第二衬底上沉积绝缘层，同时将衬底的温度从第一温度降低到第二温度。