公开(公告)号：US20150380577A1

公开(公告)日：2015-12-31

申请号：US14318100

申请日：2014-06-27

申请人： Paul Loscutoff ,  Taeseok Kim ,  Michael Morse ,  Peter John Cousins ,  Kevin Mikio Mukai

发明人： Paul Loscutoff ,  Taeseok Kim ,  Michael Morse ,  Peter John Cousins ,  Kevin Mikio Mukai

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/022441 ,  H01B1/20 ,  H01B1/22 ,  H01L31/0682 ,  H01L31/0745 ,  Y02E10/547

摘要： A solar cell can include a substrate and a semiconductor region disposed in or above the substrate. Selective firing of a conductive paste can be used to form a conductive contact for a solar cell. The solar cell can also include a conductive contact disposed on the semiconductor region with the conductive contact including a conductive paste that has a top and bottom portion with the top portion having particles coalesced together.

摘要翻译： 太阳能电池可以包括基板和设置在基板中或上方的半导体区域。 可以使用导电膏的选择性烧制来形成用于太阳能电池的导电接触。 太阳能电池还可以包括设置在半导体区域上的导电触点，导电触点包括具有顶部和底部的导电浆料，顶部部分具有聚结在一起的颗粒。

公开(公告)号：US07431967B2

公开(公告)日：2008-10-07

申请号：US10757770

申请日：2004-01-14

申请人： Zheng Yuan ,  Shankar Venkataraman ,  Cary Ching ,  Shang Wong ,  Kevin Mikio Mukai ,  Nitin K. Ingle

发明人： Zheng Yuan ,  Shankar Venkataraman ,  Cary Ching ,  Shang Wong ,  Kevin Mikio Mukai ,  Nitin K. Ingle

IPC分类号： C23C16/00 ,  C23C14/00 ,  C23C16/22 ,  H01L21/302 ,  H01L21/461

CPC分类号： C23C16/401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/52 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31625 ,  H01L21/76837

摘要： A method of filling a gap on a substrate includes providing flows of silicon-containing processing gas oxidizing processing gas, and phosphorous-containing processing gas to a chamber housing the substrate and depositing a first portion of a P-doped silicon oxide film as a substantially conformal layer in the gap by causing a reaction among the processing gases and varying over time a ratio of the gases. The temperature of the substrate is maintained below about 500° C. throughout deposition of the conformal layer. The method also includes depositing a second portion of the P-doped silicon oxide film as a bulk layer by maintaining the ratio of the gases substantially constant throughout deposition of the bulk layer. The temperature of the substrate is maintained below about 500° C. throughout deposition of the bulk layer.

摘要翻译： 在衬底上填充间隙的方法包括提供含硅处理气体氧化处理气体和含磷处理气体的流向容纳衬底的腔室，并将P掺杂氧化硅膜的第一部分基本上 通过引起处理气体之间的反应并随时间改变气体的比例，间隙中的保形层。 在保形层的沉积过程中，基板的温度保持在约500℃以下。 该方法还包括通过在本体层的整个沉积期间保持气体的比率基本恒定来沉积P掺杂氧化硅膜的第二部分作为本体层。 在本体层的整个沉积过程中，衬底的温度保持在约500℃以下。

公开(公告)号：US07205205B2

公开(公告)日：2007-04-17

申请号：US10712464

申请日：2003-11-12

申请人： Won B. Bang ,  Yen-Kun Wang ,  Kevin Mikio Mukai ,  Theresa Marie O. Liu

发明人： Won B. Bang ,  Yen-Kun Wang ,  Kevin Mikio Mukai ,  Theresa Marie O. Liu

IPC分类号： H01L21/76

CPC分类号： H01L21/02129 ,  C23C16/4405 ,  C23C16/46 ,  H01J37/32862 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31625 ,  H01L21/76224

摘要： A method of operating a substrate processing chamber comprising transferring a first substrate into the substrate processing chamber and heating the substrate to a first temperature of at least 510° C.; depositing an insulating layer over the first substrate while reducing the temperature of the substrate from the first temperature to a second temperature that is lower than the first temperature; transferring the first substrate out of the substrate processing chamber; removing unwanted deposition material formed on interior surfaces of the chamber during the depositing step by introducing reactive halogen species into the chamber while increasing the temperature of chamber; transferring a second substrate into the substrate processing chamber and heating the substrate to the first temperature; and depositing an insulating layer over the second substrate while reducing the temperature of the substrate from the first temperature to the second temperature.

摘要翻译： 一种操作衬底处理室的方法，包括将第一衬底转移到衬底处理室中并将衬底加热至至少510℃的第一温度; 在第一衬底上沉积绝缘层，同时将衬底的温度从第一温度降低到低于第一温度的第二温度; 将所述第一衬底转移出所述衬底处理室; 在沉积步骤期间，通过将反应性卤素物质引入室中，同时增加室的温度来除去在室的内表面上形成的不需要的沉积材料; 将第二衬底转移到衬底处理室中并将衬底加热到​​第一温度; 以及在第二衬底上沉积绝缘层，同时将衬底的温度从第一温度降低到第二温度。

公开(公告)号：US20090191711A1

公开(公告)日：2009-07-30

申请号：US12022496

申请日：2008-01-30

申请人： Ying Rui ,  Nancy Fung ,  Xiaoye Zhao ,  Kevin Mikio Mukai ,  Yasunobu Iwamoto

发明人： Ying Rui ,  Nancy Fung ,  Xiaoye Zhao ,  Kevin Mikio Mukai ,  Yasunobu Iwamoto

IPC分类号： H01L21/306 ,  C23F1/08

CPC分类号： H01L21/31144 ,  G03F7/091 ,  G03F7/40 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/3266 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76802

摘要： Methods for forming an ultra thin structure. The method includes a polymer deposition and etching process. In one embodiment, the methods may be utilized to form fabricate submicron structure having a critical dimension less than 30 nm and beyond. The method further includes a multiple etching processes. The processes may be varied to meet different process requirements. In one embodiment, the process gently etches the substrate while shrinking critical dimension of the structures formed within the substrate. The dimension of the structures may be shank by coating a photoresist like polymer to sidewalls of the formed structure, but substantially no polymer accumulation on the bottom surface of the formed structure on the substrate. The embodiments described herein also provide high selectivity in between each layers formed on the substrate during the fabricating process and preserving a good control of profile formed within the structure.

摘要翻译： 形成超薄结构的方法。 该方法包括聚合物沉积和蚀刻工艺。 在一个实施方案中，可以利用这些方法形成临界尺寸小于30nm及以上的制造亚微米结构。 该方法还包括多次蚀刻工艺。 可以改变过程以满足不同的工艺要求。 在一个实施例中，该方法在收缩衬底内形成的结构的临界尺寸的同时轻轻蚀刻衬底。 结构的尺寸可以通过将光致抗蚀剂像聚合物涂覆到所形成的结构的侧壁上而基本上没有聚合物聚集在基底上形成的结构的底表面上。 本文描述的实施例还在制造过程期间在形成在基板上的每个层之间提供高选择性，并且保持对在结构内形成的轮廓的良好控制。