公开(公告)号：US20220115574A1

公开(公告)日：2022-04-14

申请号：US17500881

申请日：2021-10-13

Applicant: Worcester Polytechnic Institute

Inventor： Sathwik Bharadwaj Daralagodu Dattatreya Jois ,  Ashwin Ramasubramaniam ,  Lakshminarayanapuram Ramdas Ram-Mohan

IPC: H01L35/04 ,  H01L35/34

Abstract: A method of fabricating a two dimensional thermoelectric device includes forming dissimilar atomic layers having quantum electron transport properties, and forming a well-defined interface between the dissimilar atomic layers for effecting a thermoelectric transport by exploiting a gradient in the material parameters between the layers. The resulting device defines an inclusion matrix of the dissimilar atomic layers such that the inclusion layer is confined within a matrix formed by the other atomic layer.