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公开(公告)号:US20220115574A1
公开(公告)日:2022-04-14
申请号:US17500881
申请日:2021-10-13
Applicant: Worcester Polytechnic Institute
Inventor: Sathwik Bharadwaj Daralagodu Dattatreya Jois , Ashwin Ramasubramaniam , Lakshminarayanapuram Ramdas Ram-Mohan
Abstract: A method of fabricating a two dimensional thermoelectric device includes forming dissimilar atomic layers having quantum electron transport properties, and forming a well-defined interface between the dissimilar atomic layers for effecting a thermoelectric transport by exploiting a gradient in the material parameters between the layers. The resulting device defines an inclusion matrix of the dissimilar atomic layers such that the inclusion layer is confined within a matrix formed by the other atomic layer.
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2.
公开(公告)号:US20190392099A1
公开(公告)日:2019-12-26
申请号:US16451612
申请日:2019-06-25
Applicant: WORCESTER POLYTECHNIC INSTITUTE
Inventor: Siddhant Pandey , Sathwik Bharadwaj Daralagodu Dattatreya Jois , Lakshminarayanapuram Ramdas Ram-Mohan
IPC: G06F17/50
Abstract: Embodiments of the innovation relate to, in a modeling apparatus, a method of identifying electromagnetic behavior of an electronic component. The method includes receiving, by the modeling apparatus, geometric design criteria and material property criteria for the component; defining, by the modeling apparatus, a set of finite elements representing the component based upon the geometric design criteria and material property criteria; applying, by the modeling apparatus, a Hermite finite element method function to each finite element to define an electromagnetic field for each finite element; applying, by the modeling apparatus, a divergence-free condition at each node of each finite element to define an electromagnetic field at each node; and based upon application of the Hermite finite element method function and the divergence free condition to generate the electromagnetic fields, generating, by the modeling apparatus, a model of the electromagnetic behavior of the component.
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