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公开(公告)号:US20240093349A1
公开(公告)日:2024-03-21
申请号:US18525005
申请日:2023-11-30
Applicant: Wuhan Tianma Micron-Electronics Co., Ltd. , Wuhan Tianma Micro-Electronics Co., Ltd. Shanghai Branch
Inventor: Naichao MU , Yuan LI , Yu XIN , Jun MA , Lijing HAN
CPC classification number: C23C14/042 , C23C14/12 , H10K71/00 , H10K71/166
Abstract: A mask module includes a framework, a first strip plate fixed on the framework and extending along a first direction, and a first mask. The first mask is located on a side, deviating from the framework, of the first strip plate. The first mask includes at least one preset area, and the preset area includes at least one opening area. The first strip plate is provided with a first concave-convex structure on one side edge along the first direction. At least one convex structure is provided in a middle of the first concave-convex structure along the first direction. In a direction perpendicular to a surface of the first mask, the first concave-convex structure and the convex structure cover at least a part of area of the at least one opening of the preset area. The convex structure and the first stripe plate are integrally formed.
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公开(公告)号:US20210118960A1
公开(公告)日:2021-04-22
申请号:US17138790
申请日:2020-12-30
Applicant: WuHan TianMa Micro-electronics CO., LTD.
Inventor: Xueshun HOU , Dongxu XIANG , Yuan LI , Tao PENG
IPC: H01L27/32
Abstract: Provided are a display panel and a display apparatus. The display panel includes a normal display region and a functional region. The normal display region includes a first display region, a second display region and a third display region. Along a first direction, lengths of third, first and second display regions of the normal display region decrease. One of the first and third display regions is a specific display region where first semiconductor pattern layers are located. The first semiconductor pattern layers are arranged along a third direction and connected to each other. In the second display region, the second semiconductor pattern layers first semiconductor pattern layers is arranged along a third direction and connected to each other. The second semiconductor pattern layers are connected to the first semiconductor pattern layers.
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