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公开(公告)号：US20230388010A1
公开(公告)日：2023-11-30
申请号：US18323362
申请日：2023-05-24
Applicant: XIAMEN EOCHIP SEMICONDUCTOR CO., LTD
IPC: H04B10/038 , H04Q11/00 , H04B10/40
CPC classification number: H04B10/038 , H04Q11/0067 , H04B10/40 , H04Q2011/0081
Abstract: A 10G rate OLT terminal transceiver integrated chip based on XGSPON and DFB laser includes: a burst mode receiver RX which amplifies an optical signal from each ONU client into an electrical signal through a burst transimpedance amplifier TIA, processes amplitude detection, and outputs the signal whose amplitude met the threshold requirements to a host, and comprises a fast recovery module to discharge charges in an AC coupling capacitor to achieve multi-packet transmission without mutual interference, thereby meeting the timing sequence requirement of the XGSPON protocol; a continuous mode transmitter TX which receives the electrical signal attenuated by a PCB board, and selects a bypass BYPASS path or a clock data recovery CDR path for activation according to a degree of attenuation; and a digital control unit DIGIITAL which communicates with the host and provides control signals for the burst mode receiver RX and the continuous mode transmitter TX.
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公开(公告)号：US20230291361A1
公开(公告)日：2023-09-14
申请号：US18041203
申请日：2021-12-24
Applicant: XIAMEN EOCHIP SEMICONDUCTOR CO., LTD
Inventor： Zhicong LUO , Jinghu LI , Riqing CHEN , Haofan DING , Xin HONG , Jianhai YU , Hanghui TU
CPC classification number: H03F1/301 , H03F1/42 , H03F3/45179 , H03F2200/36 , H03F2200/447
Abstract: A high-speed transimpedance amplifier with bandwidth extension feature over full temperature range and bandwidth extension method belong to the field of integrated circuit. The present invention solves the problem existed in boosting core amplifier bandwidth technology over full temperature range. The present invention includes a preamplifier TIA, a phase splitting stage PS, a pre-driver stage Pre-Drive, an output buffer BUFF and an offset cancelation circuit OC. The preamplifier TIA adopts the gate-drain voltage cancelation technology to expand the bandwidth, so that its −3 dB bandwidth is greater than twice the closed-loop bandwidth of the first-order TIA. The pre-driver stage Pre-Drive is used to drive the output buffer BUFF. By adjusting the source-level negative feedback capacitance value of the pre-driver stage Pre-Drive circuit to generate a high-frequency gain that varies with temperature, the preamplifier TIA bandwidth differences under different temperature conditions are compensated.
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公开(公告)号：US20230388682A1
公开(公告)日：2023-11-30
申请号：US18323352
申请日：2023-05-24
Applicant: XIAMEN EOCHIP SEMICONDUCTOR CO., LTD
IPC: H04Q11/00 , H04B10/079 , H04B10/038
CPC classification number: H04Q11/0067 , H04B10/0795 , H04B10/038
Abstract: A 10G rate OLT terminal transceiver integrated chip based on XGPON and DFB laser includes: a burst mode receiver RX, a continuous mode transmitter TX and a digital control unit DIGIITAL. The burst mode receiver RX amplifies an optical signal from each ONU client into an electrical signal through a burst TIA, processes double-detection for amplitude and frequency of the electrical signal, outputs the signal whose amplitude and waveform pulse width meet the threshold requirements to the host, and uses a fast recovery module to control the timing to meet the XGPON protocol. The continuous mode transmitter TX receives the electrical signal attenuated by the PCB, and selects the bypass BYPASS path or the clock data recovery CDR path according to the degree of attenuation. The digital control unit DIGIITAL is used to provide control signals for the burst mode receiver RX and the continuous mode transmitter TX.
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公开(公告)号：US20230388019A1
公开(公告)日：2023-11-30
申请号：US18357214
申请日：2023-07-24
Applicant: XIAMEN EOCHIP SEMICONDUCTOR CO., LTD
CPC classification number: H04B10/40 , H04Q11/0067
Abstract: A 10G rate OLT terminal transceiver integrated chip based on EPON with EML laser includes: a burst mode receiver RX which processes signal amplification and selects one of the two preset channels as a working channel for output through receiving an external command from a host; a continuous mode transmitter TX which receives the electrical signal attenuated by a PCB board, and selects a bypass BYPASS path or a clock data recovery CDR path according to a degree of attenuation to drive the EML laser; a digital control unit DIGIITAL for path selection of the burst mode receiver RX; and a power module POWER, wherein the opening and closing of the two rate channels are controlled by the level judgment unit and the output blocking unit.
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公开(公告)号：US20240072902A1
公开(公告)日：2024-02-29
申请号：US18240601
申请日：2023-08-31
Applicant: XIAMEN EOCHIP SEMICONDUCTOR CO., LTD
Inventor： Jinghu LI , Fujie CHEN , Hanghui TU
IPC: H04B10/50
CPC classification number: H04B10/503
Abstract: An optical transmitter chip based on OTN transmission technology, which solves the high bit error rate in existing OTN technology for data transmission below 100 m in the data center, includes a transmitter TX, a digital control unit DIGIITAL, and a power module POWER. The transmitter TX first uses the optical modulation amplitude signal loss module to complete a judgment of an optical modulation amplitude for an attenuated electrical signal transmitted through metal traces on a PCB board. Only if the signal is greater than the preset threshold, an enable signal is output to control a linear equalizer and a laser driver to start, and open a signal transmission path for the chip-driven laser to emit an optical signal. The linear equalizer and the bypass ByPass process signal optimization in two-stage, then the signal is sent to the laser driver to drive the laser to emit an optical signal.
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Patent Agency Ranking
6.发明公开公开(公告)号：US20240047942A1
公开(公告)日：2024-02-08
申请号：US18004054
申请日：2021-12-24
Applicant: XIAMEN EOCHIP SEMICONDUCTOR CO., LTD
Inventor： Jinghu LI , Zhang FAN , Liangqiong SHI , Weitan YAO , Weiyin ZHENG , Hanghui TU
IPC: H01S5/062
CPC classification number: H01S5/06203 , H04B10/40
Abstract: A DFB laser DC-coupled output power configuration scheme with adjustable voltage difference. utilizes an external or internal power configuration unit to provide two electric DC power supplies with a fixed voltage difference for the transmitting unit TX of the DFB laser and the optical transceiver integrated chip, and at the same time optimizes the transmitting unit TX. The optimization scheme is that: the transistors in the transmitting unit TX are all low-voltage high-speed tubes, the transmitting unit TX includes a negative capacitance structure composed of capacitors C1 and C2, serving as an auxiliary structure for improving bandwidth. After optimization, the minimum voltage of the power supply voltage port TVCC of the transmitting unit TX is 2.7V and the problems that the output eye diagram is severely cracked and cannot be used when the traditional DFB laser configuration scheme with an external 3.3V power supply is tested at high temperature are solved.
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公开(公告)号：US20240072906A1
公开(公告)日：2024-02-29
申请号：US18240611
申请日：2023-08-31
Applicant: XIAMEN EOCHIP SEMICONDUCTOR CO., LTD
Inventor： Jinghu LI , Fujie CHEN , Hanghui TU
CPC classification number: H04B10/60 , H03L7/0807
Abstract: An optical receiver chip based on OTN transmission technology to solve the high power consumption and serous signal attenuation problems for data transmission below 100 m in the data center includes a receiver, a digital control unit, and a power module. The receiver includes a 28 G transimpedance amplifier and a limiting amplifier, converts a weak optical signal into an electrical signal, process a two-stage amplification, and output the signal in a limited state. The signal is then processed by a photodiode into a DC current RSSI, and judged by the internal received signal strength indicator module or the internal optical modulation amplitude loss of signal module of the limiting amplifier. If the signal does not meet the protocol requirements, the output buffer with de-emphasis and the linear equalizer are turned off, and the judgment result is transmitted to the host computer outside the chip simultaneously.
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公开(公告)号：US20230388011A1
公开(公告)日：2023-11-30
申请号：US18324771
申请日：2023-05-26
Applicant: XIAMEN EOCHIP SEMICONDUCTOR CO., LTD
IPC: H04B10/038 , H04B10/40 , H04B10/50
CPC classification number: H04B10/038 , H04B10/40 , H04B10/503
Abstract: A 10G rate OLT terminal transceiver integrated chip based on XGPON and EML laser includes: a burst mode receiver RX which amplifies an electrical signal originated each ONU client and processed through a burst mode receiver TIA, processes amplitude and frequency double-detection, and outputs the signal whose amplitude and waveform pulse width met the threshold requirements to a host, and comprises a fast recovery module to meet the timing sequence requirement of the XGPON protocol; a continuous mode transmitter TX which receives the electrical signal attenuated by a PCB board, and selects a bypass BYPASS path or a clock data recovery CDR path according to a degree of attenuation to drive the EML laser; a digital control unit DIGIITAL which provides control signals to the burst mode receiver RX and the continuous mode transmitter TX; and a power module POWER to supply working power to the chip.
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公开(公告)号：US20230291175A1
公开(公告)日：2023-09-14
申请号：US18246906
申请日：2021-12-24
Applicant: XIAMEN EOCHIP SEMICONDUCTOR CO., LTD
Inventor： Jinghu LI , Zhang FAN , Liangqiong SHI , Weitan YAO , Weiyin ZHENG , Hanghui TU
CPC classification number: H01S5/0427 , H01S5/12
Abstract: A DFB laser DC-coupled output power configuration scheme belongs to the field of laser drivers in optical communication integrated circuits. The present invention solves the existing problems in the conventional DFB laser power supply configuration scheme. The power configuration scheme of the present invention utilizes an external or internal power configuration unit to provide two electric DC power supplies with a fixed voltage difference for the transmitting unit TX of the DFB laser and the optical transceiver integrated chip, and at the same time optimizes the transmitting unit TX. The optimization scheme is that: the transistors in the transmitting unit TX are all low-voltage high-speed tubes, the transmitting unit TX includes a negative capacitance structure composed of capacitors C1 and C2, serving as an auxiliary structure for improving bandwidth. After optimization, the minimum voltage of the power supply voltage port TVCC of the transmitting unit TX is 2.7V.
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公开(公告)号：US20250038850A1
公开(公告)日：2025-01-30
申请号：US18787048
申请日：2024-07-29
Applicant: XIAMEN EOCHIP SEMICONDUCTOR CO., LTD
Inventor： Yuanyuan ZHOU , Jinghu LI , Fujie CHEN , Liangqiong SHI
IPC: H04B10/2507 , H04B10/69 , H04B10/80
Abstract: A high-speed TIA anti-5G WIFI electromagnetic interference method includes the steps of: stacking a high-voltage capacitor C9 and a resistor R11 for constructing a filter circuit on a bare DIE chip of TIA; splitting C9 into two parallel filter capacitors C91 and C92, which satisfy C9=C91+C92, C91=C92; constructing differential output to cancel signal interference; constructing electromagnetic interference that cancels out lens leakage by stacking avalanche photodiode APD, C91 and gold-plated pad on the vertical axis close to the bare DIE chip, and connecting to the pads through gold wires; stacking R11 and C92 on the vertical axis between pins VDD and VAPD, connecting R11 to C91 through gold wire No. 1, connecting C92 to pin VAPD through gold wire No. 2, the gold wire No. 1 and the gold wire No. 2 form a 90° angle to offset the electromagnetic interference leaked by the lens.
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