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公开(公告)号：US12096703B2
公开(公告)日：2024-09-17
申请号：US18009530
申请日：2021-06-29
发明人： Taiwei Chiu , Tingying Shen , Qi Xiang
CPC分类号： H10N70/021 , H10B63/80 , H10N70/063 , H10N70/841
摘要： A semiconductor device and a manufacturing method of the semiconductor device. The semiconductor device includes: a semiconductor substrate; a bottom electrode metal layer located in the semiconductor substrate and a top electrode metal layer located on the semiconductor substrate; a resistive layer located between the bottom electrode metal layer and the top electrode metal layer, where the resistive layer has a variable resistance; a first oxygen grasping layer located between the bottom electrode metal layer and the top electrode metal layer, where the first oxygen grasping layer is located above the resistive layer; a second oxygen grasping layer located in the bottom electrode metal layer, where upper surfaces of the semiconductor substrate, the bottom electrode metal layer, and the second oxygen grasping layer are flush, and the resistive layer covers the semiconductor substrate, the bottom electrode metal layer, and the second oxygen grasping layer.
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公开(公告)号：US12102021B2
公开(公告)日：2024-09-24
申请号：US18009525
申请日：2021-06-29
发明人： Taiwei Chiu , Tingying Shen , He Qian
CPC分类号： H10N70/8833 , H10B63/80 , H10N70/021 , H10N70/063 , H10N70/841
摘要： A semiconductor device and a manufacturing method of the semiconductor device. The semiconductor device includes: a semiconductor substrate; a bottom electrode metal layer and a top electrode metal layer located on the semiconductor substrate; a resistive layer located between the bottom electrode metal layer and the top electrode metal layer, where the transverse width of the resistive layer is greater than the transverse width of the bottom electrode metal layer and/or the top electrode metal layer, and the resistive layer has a variable resistance; an oxygen barrier layer located between the bottom electrode metal layer and the top electrode metal layer, where the oxygen barrier layer is located above the resistive layer; and an oxygen grasping layer located between the bottom electrode metal layer and the top electrode metal layer, where the transverse width of the oxygen grasping layer is less than the transverse width of the resistive layer.
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