公开(公告)号：US11189751B2

公开(公告)日：2021-11-30

申请号：US16655832

申请日：2019-10-17

申请人： XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.

发明人： Han Jiang ,  Yung-Ling Lan ,  Wen-Pin Huang ,  Changwei Song ,  Li-Cheng Huang ,  Feilin Xun ,  Chan-Chan Ling ,  Chi-Ming Tsai ,  Chia-Hung Chang

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32

摘要： Disclosed is a multi-quantum well structure including a stress relief layer, an electron-collecting layer disposed on the stress relief layer, and an active layer including a first active layer unit that is disposed on the electron-collecting layer. The first active layer unit includes potential barrier sub-layers and potential well sub-layers being alternately stacked, in which at least one of the potential barrier sub-layers has a GaN/Alx1Iny1Ga(1-x1-y1)N/GaN stack, where 0