公开(公告)号：US20220302345A1

公开(公告)日：2022-09-22

申请号：US17806528

申请日：2022-06-13

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Jiangbin ZENG ,  Anhe HE ,  Ling-yuan HONG ,  Kang-Wei PENG ,  Su-hui LIN ,  Chia-Hung CHANG

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/10 ,  H01L33/38

Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.