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公开(公告)号：US20220302345A1
公开(公告)日：2022-09-22
申请号：US17806528
申请日：2022-06-13
Inventor： Jiangbin ZENG , Anhe HE , Ling-yuan HONG , Kang-Wei PENG , Su-hui LIN , Chia-Hung CHANG
Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.
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Patent Agency Ranking
公开(公告)号：US20220123176A2
公开(公告)日：2022-04-21
申请号：US17064250
申请日：2020-10-06
Inventor： Xiaoliang LIU , Anhe HE , Kang-wei PENG , Su-hui LIN , Ling-yuan HONG , Chia-hung CHANG
Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.
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公开(公告)号：US20210066549A1
公开(公告)日：2021-03-04
申请号：US17064250
申请日：2020-10-06
Inventor： Xiaoliang LIU , Anhe HE , Kang-wei PENG , Su-hui LIN , Ling-yuan HONG , Chia-hung CHANG
Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.
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公开(公告)号：US20230268466A1
公开(公告)日：2023-08-24
申请号：US18305956
申请日：2023-04-24
Inventor： Xiaoliang LIU , Anhe HE , Kang-wei PENG , Su-hui LIN , Ling-yuan HONG , Chia-hung CHANG
CPC classification number: H01L33/405 , H01L33/382 , H01L33/46 , H01L2933/0016 , H01L2933/0025
Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.
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公开(公告)号：US20210336080A1
公开(公告)日：2021-10-28
申请号：US17366268
申请日：2021-07-02
Inventor： Qing WANG , Dazhong CHEN , Sheng-Hsien HSU , Ling-yuan HONG , Kang-Wei PENG , Si-hui LIN , Chia-Hung CHANG
Abstract: A light-emitting diode includes a substrate, a distributed Bragg reflector (DBR) structure and a semiconductor layered structure. The DBR structure is disposed on the substrate. The semiconductor layered structure is disposed on the DBR structure opposite to the substrate, and is configured to emit a light having a first wavelength. The DBR structure has a reflectance of not greater than 30% for the light having the first wavelength, and a reflectance of not smaller than 50% for a laser beam having a second wavelength that is different from the first wavelength.
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公开(公告)号：US20180076152A1
公开(公告)日：2018-03-15
申请号：US15810076
申请日：2017-11-12
Inventor： Gaolin ZHENG , Ling-yuan HONG , Xiaoxiong LIN , Feng WANG , Su-hui LIN , Chia-hung CHANG
CPC classification number: H01L23/60 , H01L27/153 , H01L33/0079 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/62 , H01L33/648 , H01L2933/0016
Abstract: A fabrication method of a high-voltage light-emitting diode includes the steps of providing a substrate, and forming a light-emitting epitaxial laminated layer on the substrate; patterning the light-emitting epitaxial laminated layer and fabricating a channel that exposes the substrate surface so as to divide the light-emitting epitaxial laminated layer into a plurality of light-emitting diode units, and the light-emitting diode units at least constitute two rows; fabricating an electrode interconnection line crossing the channel, wherein, two adjacent light-emitting diode units are connected by the electrode interconnection line; fabricating an electrode bonding pad over the outmost light-emitting diode unit of the high-voltage light-emitting diode; and fabricating an insulating protective layer opening at the channel where the potential difference of any two adjacent light-emitting diodes is ≧3 times of the forward voltage of a single light-emitting diode to avoid breakdown of the light-emitting epitaxial laminated layer.
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