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公开(公告)号：US20180102461A1
公开(公告)日：2018-04-12
申请号：US15817216
申请日：2017-11-19
Inventor： Huining WANG , Sheng-hsien HSU , Kang-wei PENG , Su-hui LIN , Chen-ke HSU
IPC: H01L33/42 , H01L33/00 , H01L33/06 , H01L33/32 , H01L25/075
CPC classification number: H01L33/42 , H01L25/0753 , H01L33/007 , H01L33/0095 , H01L33/06 , H01L33/14 , H01L33/32 , H01L2933/0016
Abstract: A light-emitting diode includes from bottom to up: a substrate; a light-emitting epitaxial layer laminated by semiconductor material layers over the substrate; a current spreading layer doped with conductive metal nanomaterial groups over the light-emitting epitaxial layer; and metal nanomaterial groups with high visible light transmittance over the current spreading layer. The conductive metal nanomaterial groups dispersed inside the ITO current spreading layer can reduce horizontal resistance of the current spreading layer and improve horizontal spreading uniformity of current; and metal nanomaterial groups with high visible light transmittance are distributed over the upper surface of the current expansion layer for roughening and increasing light extract efficiency.
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公开(公告)号：US20170141266A1
公开(公告)日：2017-05-18
申请号：US15422216
申请日：2017-02-01
Inventor： Sheng-hsien HSU , Gong CHEN , Su-hui LIN , Yu-chieh HUANG , Chen-ke HSU
CPC classification number: H01L33/22 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L33/007 , H01L33/06 , H01L33/16 , H01L33/32 , H01L2933/0058
Abstract: A patterned sapphire substrate has a first surface and a second surface opposite to each other; the connection zone between first protrusion portions has no C surface (i.e. (0001) surface); and the patterned sapphire substrate may have no C surface on the growth surface to reduce the threading dislocation density of the GaN epitaxial material on the sapphire substrate.
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公开(公告)号：US20220302345A1
公开(公告)日：2022-09-22
申请号：US17806528
申请日：2022-06-13
Inventor： Jiangbin ZENG , Anhe HE , Ling-yuan HONG , Kang-Wei PENG , Su-hui LIN , Chia-Hung CHANG
Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.
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公开(公告)号：US20220123176A2
公开(公告)日：2022-04-21
申请号：US17064250
申请日：2020-10-06
Inventor： Xiaoliang LIU , Anhe HE , Kang-wei PENG , Su-hui LIN , Ling-yuan HONG , Chia-hung CHANG
Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.
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公开(公告)号：US20210066549A1
公开(公告)日：2021-03-04
申请号：US17064250
申请日：2020-10-06
Inventor： Xiaoliang LIU , Anhe HE , Kang-wei PENG , Su-hui LIN , Ling-yuan HONG , Chia-hung CHANG
Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.
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Patent Agency Ranking
公开(公告)号：US20180108810A1
公开(公告)日：2018-04-19
申请号：US15846146
申请日：2017-12-18
Inventor： Anhe HE , Su-hui LIN , Jiansen ZHENG , Kang-wei PENG , Xiaoxiong LIN , Chen-ke HSU
CPC classification number: H01L33/38 , H01L33/005 , H01L33/12 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0058
Abstract: A flip-chip light-emitting diode structure includes a substrate; an epitaxial layer over the substrate, which includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer; a first electrode structure over the first semiconductor layer; a second electrode structure over the second semiconductor layer; wherein, the first electrode structure includes a first electrode body and a first electrode ring; the second electrode structure includes a second electrode body and a second electrode ring; the thickness of the first electrode ring is greater than or equal to that of the first electrode body and the thickness of the second electrode ring is greater than or equal to that of the second electrode body. As barrier structures, the first and the second electrode rings are used for avoiding short circuit during packaging and usage of the light-emitting diode due to overflow of solid crystal conductive materials, thus improving reliability.
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公开(公告)号：US20230268466A1
公开(公告)日：2023-08-24
申请号：US18305956
申请日：2023-04-24
Inventor： Xiaoliang LIU , Anhe HE , Kang-wei PENG , Su-hui LIN , Ling-yuan HONG , Chia-hung CHANG
CPC classification number: H01L33/405 , H01L33/382 , H01L33/46 , H01L2933/0016 , H01L2933/0025
Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.
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公开(公告)号：US20210384383A1
公开(公告)日：2021-12-09
申请号：US17445691
申请日：2021-08-23
Inventor： Anhe HE , Su-hui LIN , Jiansen ZHENG , Kangwei PENG , Xiaoxiong LIN , Chen-ke HSU
Abstract: A flip-chip light emitting diode (LED) includes: a sapphire substrate having an edge; an epitaxial layer over the substrate, wherein the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer, wherein the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer over the epitaxial bulk layer, wherein a portion of the insulating layer that covers a sidewall of the epitaxial bulk layer is separated from the edge of the substrate by the barrier structure.
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公开(公告)号：US20170141271A1
公开(公告)日：2017-05-18
申请号：US15418670
申请日：2017-01-27
Inventor： Xinghua LIANG , Hongquan HE , Chia-en LEE , Te-Ling HSIA , Su-hui LIN , Chen-ke HSU
CPC classification number: H01L33/46 , H01L33/005 , H01L33/38 , H01L33/405 , H01L33/50 , H01L2933/0016 , H01L2933/0025
Abstract: A light-emitting diode (LED) structure includes a substrate; a first semiconductor layer on the substrate; a light emitting layer on the first semiconductor layer; a second semiconductor layer on the light emitting layer; and an electrode on the semiconductor layer composed of a body and an extension body, wherein, the electrode extension portion is in a certain angle with the contacting semiconductor layer and separates the electrode body from the light emitted to its top surface and sides with a semi-wrapping structure.
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公开(公告)号：US20170133557A1
公开(公告)日：2017-05-11
申请号：US15417227
申请日：2017-01-27
Inventor： Zhibai ZHONG , Wen-yu LIN , Yen-chih CHIANG , Jianming LIU , Chia-en LEE , Su-hui LIN , Chen-ke HSU
CPC classification number: H01L33/385 , H01L33/0075 , H01L33/38 , H01L33/486 , H01L33/62 , H01L33/641 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066 , H01L2933/0075
Abstract: A flip-chip light emitting device includes: a light-emitting epitaxial laminated layer with two opposite surfaces, in which, the first surface is a light-emitting surface; a first electrode and a second electrode that are separated from each other on the second surface of the light-emitting epitaxial laminated layer; a non-conductive substrate with two opposite surfaces and two side walls connecting those two surfaces, in which, the first surface is connected to the light-emitting epitaxial laminated layer through the first and the second electrodes; a first external electrode and a second external electrode on the second surface of the non-conductive substrate, which extend to the side walls of the non-conductive substrate till and at least cover parts of the side walls of the first and the second electrodes to form electrical connection.
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