公开(公告)号：US20190123243A1

公开(公告)日：2019-04-25

申请号：US16147763

申请日：2018-09-30

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： GAOLIN ZHENG ,  HOU-JUN WU ,  ANHE HE ,  SHIWEI LIU ,  KANG-WEI PENG ,  SU-HUI LIN ,  CHIA-HUNG CHANG

IPC: H01L33/38

Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed over and electrically coupled to said second semiconductor layer; wherein: the first electrode includes a plurality of first sub-electrodes; the second electrode includes a plurality of second sub-electrodes; and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.