公开(公告)号：US20190123243A1

公开(公告)日：2019-04-25

申请号：US16147763

申请日：2018-09-30

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： GAOLIN ZHENG ,  HOU-JUN WU ,  ANHE HE ,  SHIWEI LIU ,  KANG-WEI PENG ,  SU-HUI LIN ,  CHIA-HUNG CHANG

IPC: H01L33/38

Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed over and electrically coupled to said second semiconductor layer; wherein: the first electrode includes a plurality of first sub-electrodes; the second electrode includes a plurality of second sub-electrodes; and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.

公开(公告)号：US20150060879A1

公开(公告)日：2015-03-05

申请号：US14536324

申请日：2014-11-07

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： JIANSEN ZHENG ,  SUHUI LIN ,  KANGWEI PENG ,  LINGYUAN HONG ,  ANHE HE

IPC: H01L25/13 ,  H01L33/10 ,  H01L33/60 ,  H01L33/32 ,  H01L33/14

CPC classification number: H01L25/13 ,  H01L33/10 ,  H01L33/14 ,  H01L33/32 ,  H01L33/405 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A GaN-based LED includes a substrate; an epitaxial layer over the substrate; a current spreading layer over a P-type layer; and a P electrode over the current spreading layer. The epitaxial layer includes the P-type layer, a light-emitting area, and an N-type layer. An annular reflecting layer and a metal reflecting layer are formed between the P electrode and the epitaxial layer. The geometric center vertically corresponds to the P electrode; the annular reflecting layer is formed between the current spreading layer and the P-type layer; the metal reflecting layer is formed between the current spreading layer and the P electrode; and a preset distance is arranged between the annular reflecting layer and the metal reflecting layer. The annular reflecting layer and the metal reflecting layer reduce light absorption of the P electrode and improve light extraction efficiency.

Abstract translation: GaN基LED包括基板; 衬底上的外延层; 在P型层上的电流扩散层; 以及在电流扩展层上的P电极。 外延层包括P型层，发光区域和N型层。 在P电极和外延层之间形成环形反射层和金属反射层。 几何中心垂直对应于P电极; 环形反射层形成在电流扩散层和P型层之间; 金属反射层形成在电流扩散层和P电极之间; 并且在环形反射层和金属反射层之间设置预设距离。 环形反射层和金属反射层减少了P电极的光吸收，提高了光提取效率。