公开(公告)号：US20190115511A1

公开(公告)日：2019-04-18

申请号：US16147604

申请日：2018-09-29

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Su-Hui Lin ,  Lingyuan Hong ,  SHENG-HSIEN HSU ,  Sihe CHEN ,  Dazhong CHEN ,  Gong CHEN ,  CHIA-HUNG CHANG ,  KANG-WEI PENG

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/10 ,  H01L33/00 ,  H01L27/15

Abstract: A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.

公开(公告)号：US20220029052A1

公开(公告)日：2022-01-27

申请号：US17450630

申请日：2021-10-12

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： GONG CHEN ,  SU-HUI LIN ,  SHENG-HSIEN HSU ,  KANG-WEI PENG ,  LING-YUAN HONG ,  MINYOU HE ,  CHIA-HUNG CHANG

IPC: H01L33/00 ,  H01L33/24

Abstract: A light-emitting diode chip includes a substrate. The substrate has a side surface configured as a serrated surface, which includes a plurality of laser inscribed features disposed along a thickness direction of the substrate and spaced apart from each other. A method for manufacturing the light-emitting diode chip is also disclosed herein.

公开(公告)号：US20190123243A1

公开(公告)日：2019-04-25

申请号：US16147763

申请日：2018-09-30

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： GAOLIN ZHENG ,  HOU-JUN WU ,  ANHE HE ,  SHIWEI LIU ,  KANG-WEI PENG ,  SU-HUI LIN ,  CHIA-HUNG CHANG

IPC: H01L33/38

Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed over and electrically coupled to said second semiconductor layer; wherein: the first electrode includes a plurality of first sub-electrodes; the second electrode includes a plurality of second sub-electrodes; and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.

公开(公告)号：US20240413291A1

公开(公告)日：2024-12-12

申请号：US18811718

申请日：2024-08-21

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Su-Hui Lin ,  Lingyuan Hong ,  SHENG-HSIEN HSU ,  Sihe CHEN ,  Dazhong CHEN ,  Gong CHEN ,  CHIA-HUNG CHANG ,  KANG-WEI PENG

IPC: H01L33/62 ,  H01L27/15 ,  H01L33/00 ,  H01L33/10 ,  H01L33/14 ,  H01L33/38 ,  H01L33/42

Abstract: A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.