公开(公告)号：US20210217729A1

公开(公告)日：2021-07-15

申请号：US16741319

申请日：2020-01-13

Applicant: XILINX, INC.

Inventor： Anil Kumar KANDALA ,  Vijay Kumar KOGANTI ,  Santosh YACHARENI

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/48 ,  H01L25/00 ,  H01L23/528

Abstract: Examples described herein generally relate to multi-chip devices having stacked chips. In an example, a multi-chip device includes a chip stack that includes chips. One or more chips each includes a selection circuit and a broken via pillar that includes first and second continuous portions. The first continuous portion includes a through substrate via and a first metal line. The second continuous portion includes a second metal line. The first and second metal lines are disposed within dielectric layers disposed on a side of the semiconductor substrate of the respective chip. The first and second continuous portions are aligned in a direction normal to the side of the semiconductor substrate. An input node of the selection circuit is connected to one of the first or second metal line. An output node of the selection circuit is connected to the other of the first or second metal line.