Display panel and display device
    1.
    发明授权

    公开(公告)号:US12199110B2

    公开(公告)日:2025-01-14

    申请号:US18229082

    申请日:2023-08-01

    Abstract: Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor, a second transistor and a third transistor, where the first transistor, the second transistor and the third transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.

    Array substrate, display panel, display device and method for forming array substrate

    公开(公告)号:US11335709B2

    公开(公告)日:2022-05-17

    申请号:US16916023

    申请日:2020-06-29

    Abstract: Array substrate, display panel, display device, and method for forming array substrate are provided. The array substrate includes a substrate and at least one first thin-film transistor on the substrate. the first thin-film transistor includes a first gate electrode; a first gate electrode insulating layer on a side of the first gate electrode facing away from the substrate; a first active layer on a side of the first gate electrode insulating layer facing away from the first gate electrode; a second gate electrode insulating layer on a side of the first active layer facing away from the first gate electrode insulating layer; a second gate electrode on a side of the second gate electrode insulating layer facing away from the first active layer; and a first source electrode and a first drain electrode on the first active layer facing away from the first gate electrode insulating layer.

    Display panel and display device
    3.
    发明授权

    公开(公告)号:US12200974B2

    公开(公告)日:2025-01-14

    申请号:US17451356

    申请日:2021-10-19

    Inventor: Shui He Ping An

    Abstract: A display panel and a display device are provided. The display panel includes a base substrate, and one or more first transistors and one or more second transistors over the base substrate. A first transistor of the one or more first transistors includes a first active layer, and the first active layer contains silicon. A second transistor of the one or more second transistors includes a second active layer, and the second active layer contains an oxide semiconductor material. The display panel also includes a shielding layer. The shielding layer is disposed on a side of the first active layer facing away from the base substrate, and is disposed on a side of the second active layer facing away from the base substrate. Along a projection direction perpendicular to the base substrate, the shielding layer fully covers the second active layer.

    Display panel and fabrication method, and display device

    公开(公告)号:US11063105B2

    公开(公告)日:2021-07-13

    申请号:US16821317

    申请日:2020-03-17

    Abstract: A display panel and fabrication method, and a display device are provided. The display panel includes a base substrate, a first transistor and a storage capacitor. The storage capacitor includes a first electrode and a second electrode, and the first electrode and a gate of the first transistor have an overlapped region. The display panel also includes a first insulating layer having a plurality of first vias in the overlapped region, and the first electrode is electrically connected to the gate of the first transistor through the plurality of first vias. A plurality of grooves are formed on a side of the first electrode facing away from the base substrate. A plurality of protrusions are formed on a side of the second electrode facing toward the base substrate. A groove, a protrusion and a first via overlap in a direction perpendicular to the surface of the base substrate.

    Flexible display panel and display device

    公开(公告)号:US10181568B2

    公开(公告)日:2019-01-15

    申请号:US15618126

    申请日:2017-06-09

    Abstract: A flexible display panel and a display device are provided. The flexible display panel includes: a first flexible substrate, a second flexible substrate, and an inorganic layer located between the first flexible substrate and the second flexible substrate; where there are a plurality of grooves and/or through-holes in the inorganic layer; and the first flexible substrate contacts the second flexible substrate through the grooves and/or the through-holes. In this way, the grooves and/or the through-holes are arranged in the inorganic layer so that the first flexible substrate can contact with the second flexible substrate through the grooves and/or the through-holes to thereby increase the contact area between the second flexible substrate and the inorganic layer so as to alleviate the risk of the organic layer being stripped off the inorganic layer in the flexible display panel being bent and deformed.

    Display panel and display device
    7.
    发明授权

    公开(公告)号:US12205962B2

    公开(公告)日:2025-01-21

    申请号:US18229067

    申请日:2023-08-01

    Abstract: Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor and a second transistor and a third transistor, where the first transistor, the second transistor and the third transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.

    Display panel and display device
    8.
    发明授权

    公开(公告)号:US12191318B2

    公开(公告)日:2025-01-07

    申请号:US18229040

    申请日:2023-08-01

    Abstract: Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor, a second transistor and a third transistor, where the first transistor, the second transistor and the third transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.

    Display panel and display device
    9.
    发明授权

    公开(公告)号:US11749692B2

    公开(公告)日:2023-09-05

    申请号:US17364771

    申请日:2021-06-30

    CPC classification number: H01L27/1248 H01L27/1225 H01L27/1251

    Abstract: Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor and a second transistor, where the first transistor and the second transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.

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