公开(公告)号：US20220254851A1

公开(公告)日：2022-08-11

申请号：US17451356

申请日：2021-10-19

Applicant: Xiamen Tianma Micro-Electronics Co.,Ltd.

Inventor： Shui HE ,  Ping AN

IPC: H01L27/32 ,  H01L29/786

Abstract: A display panel and a display device are provided. The display panel includes a base substrate, and one or more first transistors and one or more second transistors over the base substrate. A first transistor of the one or more first transistors includes a first active layer, and the first active layer contains silicon. A second transistor of the one or more second transistors includes a second active layer, and the second active layer contains an oxide semiconductor material. The display panel also includes a shielding layer. The shielding layer is disposed on a side of the first active layer facing away from the base substrate, and is disposed on a side of the second active layer facing away from the base substrate. Along a projection direction perpendicular to the base substrate, the shielding layer fully covers the second active layer.

公开(公告)号：US20210305284A1

公开(公告)日：2021-09-30

申请号：US16916023

申请日：2020-06-29

Applicant: Xiamen Tianma Micro-Electronics Co.,Ltd.

Inventor： Shui HE ,  Shanshan ZHENG ,  Yaqi KUANG

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/66

Abstract: Array substrate, display panel, display device, and method for forming array substrate are provided. The array substrate includes a substrate and at least one first thin-film transistor on the substrate. the first thin-film transistor includes a first gate electrode; a first gate electrode insulating layer on a side of the first gate electrode facing away from the substrate; a first active layer on a side of the first gate electrode insulating layer facing away from the first gate electrode; a second gate electrode insulating layer on a side of the first active layer facing away from the first gate electrode insulating layer; a second gate electrode on a side of the second gate electrode insulating layer facing away from the first active layer; and a first source electrode and a first drain electrode on the first active layer facing away from the first gate electrode insulating layer.

公开(公告)号：US20230378197A1

公开(公告)日：2023-11-23

申请号：US18229067

申请日：2023-08-01

Applicant: Xiamen Tianma Micro-Electronics Co., Ltd.

Inventor： Shui HE ,  Ping AN ,  Yaqi KUANG

IPC: H01L27/12

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/1251

Abstract: Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor and a second transistor and a third transistor, where the first transistor, the second transistor and the third transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.

公开(公告)号：US20220123082A1

公开(公告)日：2022-04-21

申请号：US17514547

申请日：2021-10-29

Applicant: Xiamen Tianma Micro-Electronics Co., Ltd.

Inventor： Shui HE ,  Ping AN

IPC: H01L27/32 ,  G09G3/3233

Abstract: Disclosed are a display panel and a display device. The display panel includes a base substrate, a first transistor, a second transistor, a first conductive layer and a second conductive layer. A second source of the second transistor is connected to a second active layer of the second transistor through the first conductive layer, a second drain is connected to the second active layer through the second conductive layer, and a second gate of the second transistor is overlapped with a channel region, the first conductive layer and the second conductive layer are located in a non-channel region, a width W1 of a first gap between the first conductive layer and the second gate is greater than 0, a width of a second gap W2 between the second conductive layer and the second gate is greater than 0.

公开(公告)号：US20230378198A1

公开(公告)日：2023-11-23

申请号：US18229082

申请日：2023-08-01

Applicant: Xiamen Tianma Micro-Electronics Co., Ltd.

Inventor： Shui HE ,  Ping AN ,  Yaqi KUANG

IPC: H01L27/12

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/1251

Abstract: Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor, a second transistor and a third transistor, where the first transistor, the second transistor and the third transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.

公开(公告)号：US20220085074A1

公开(公告)日：2022-03-17

申请号：US17534459

申请日：2021-11-24

Applicant: Xiamen Tianma Micro-Electronics Co.,Ltd.

Inventor： Shui HE ,  Ping An

IPC: H01L27/12

Abstract: Provided are a display panel and a display device. The display panel includes a base substrate, a first transistor, and a second transistor. The first transistor and the second transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, and the first active layer comprises silicon; the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer comprises an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate. In a first direction perpendicular to the base substrate, a first distance between the first gate and the first active layer is D1, a second distance between the second gate and the second active layer is D2, and D1

公开(公告)号：US20210327924A1

公开(公告)日：2021-10-21

申请号：US17364771

申请日：2021-06-30

Applicant: Xiamen Tianma Micro-Electronics Co., Ltd.

Inventor： Shui HE ,  Ping AN ,  Yaqi KUANG

IPC: H01L27/12

Abstract: Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor and a second transistor, where the first transistor and the second transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.

公开(公告)号：US20230378196A1

公开(公告)日：2023-11-23

申请号：US18229040

申请日：2023-08-01

Applicant: Xiamen Tianma Micro-Electronics Co., Ltd.

Inventor： Shui HE ,  Ping AN ,  Yaqi KUANG

IPC: H01L27/12

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/1251

Abstract: Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor, a second transistor and a third transistor, where the first transistor, the second transistor and the third transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.

公开(公告)号：US20210134915A1

公开(公告)日：2021-05-06

申请号：US16821317

申请日：2020-03-17

Applicant: Xiamen Tianma Micro-Electronics Co.,Ltd.

Inventor： Shui HE ,  Shaorong YU ,  Zhaokeng CAO

IPC: H01L27/32 ,  H01L51/00

Abstract: A display panel and fabrication method, and a display device are provided. The display panel includes a base substrate, a first transistor and a storage capacitor. The storage capacitor includes a first electrode and a second electrode, and the first electrode and a gate of the first transistor have an overlapped region. The display panel also includes a first insulating layer having a plurality of first vias in the overlapped region, and the first electrode is electrically connected to the gate of the first transistor through the plurality of first vias. A plurality of grooves are formed on a side of the first electrode facing away from the base substrate. A plurality of protrusions are formed on a side of the second electrode facing toward the base substrate. A groove, a protrusion and a first via overlap in a direction perpendicular to the surface of the base substrate.

公开(公告)号：US20210134224A1

公开(公告)日：2021-05-06

申请号：US16732084

申请日：2019-12-31

Applicant: Xiamen Tianma Micro-Electronics Co.,Ltd

Inventor： Shui HE ,  Kenji SERA ,  Shuxian YANG ,  Ming YANG

IPC: G09G3/3266 ,  H01L27/32 ,  G09G3/3275

Abstract: A display panel includes a substrate and a plurality of pixel driving circuits disposed on the substrate, and the plurality of pixel driving circuits include a storage capacitor and transistors. The transistors include transistors of a first type and a second type. The transistor of the first type is a composite transistor and includes a first sub-transistor and a second sub-transistor that are connected in series. The first sub-transistor is a low-temperature polysilicon transistor, and the second sub-transistor is an oxide transistor. The transistor of the first type includes a composite active layer, a composite gate electrode, a composite source electrode, and a composite drain electrode. The composite source electrode or the composite drain electrode of the transistor of the first type is electrically connected to the storage capacitor, or the transistor of the first type is in an off state during a light-emitting phase.