公开(公告)号：US20210305284A1

公开(公告)日：2021-09-30

申请号：US16916023

申请日：2020-06-29

Applicant: Xiamen Tianma Micro-Electronics Co.,Ltd.

Inventor： Shui HE ,  Shanshan ZHENG ,  Yaqi KUANG

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/66

Abstract: Array substrate, display panel, display device, and method for forming array substrate are provided. The array substrate includes a substrate and at least one first thin-film transistor on the substrate. the first thin-film transistor includes a first gate electrode; a first gate electrode insulating layer on a side of the first gate electrode facing away from the substrate; a first active layer on a side of the first gate electrode insulating layer facing away from the first gate electrode; a second gate electrode insulating layer on a side of the first active layer facing away from the first gate electrode insulating layer; a second gate electrode on a side of the second gate electrode insulating layer facing away from the first active layer; and a first source electrode and a first drain electrode on the first active layer facing away from the first gate electrode insulating layer.

公开(公告)号：US20230378196A1

公开(公告)日：2023-11-23

申请号：US18229040

申请日：2023-08-01

Applicant: Xiamen Tianma Micro-Electronics Co., Ltd.

Inventor： Shui HE ,  Ping AN ,  Yaqi KUANG

IPC: H01L27/12

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/1251

Abstract: Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor, a second transistor and a third transistor, where the first transistor, the second transistor and the third transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.

公开(公告)号：US20230378197A1

公开(公告)日：2023-11-23

申请号：US18229067

申请日：2023-08-01

Applicant: Xiamen Tianma Micro-Electronics Co., Ltd.

Inventor： Shui HE ,  Ping AN ,  Yaqi KUANG

IPC: H01L27/12

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/1251

Abstract: Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor and a second transistor and a third transistor, where the first transistor, the second transistor and the third transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.

公开(公告)号：US20230378198A1

公开(公告)日：2023-11-23

申请号：US18229082

申请日：2023-08-01

Applicant: Xiamen Tianma Micro-Electronics Co., Ltd.

Inventor： Shui HE ,  Ping AN ,  Yaqi KUANG

IPC: H01L27/12

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/1251

Abstract: Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor, a second transistor and a third transistor, where the first transistor, the second transistor and the third transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.

公开(公告)号：US20210327924A1

公开(公告)日：2021-10-21

申请号：US17364771

申请日：2021-06-30

Applicant: Xiamen Tianma Micro-Electronics Co., Ltd.

Inventor： Shui HE ,  Ping AN ,  Yaqi KUANG

IPC: H01L27/12

Abstract: Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor and a second transistor, where the first transistor and the second transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.