公开(公告)号：US4980018A

公开(公告)日：1990-12-25

申请号：US436429

申请日：1989-11-14

申请人： Xiao-Chun Mu ,  Jagir Multani

发明人： Xiao-Chun Mu ,  Jagir Multani

IPC分类号： C23F4/00 ,  H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768

CPC分类号： H01L21/32136 ,  H01L21/7684

摘要： An etchback process for etching a refractory metal layer formed on a semiconductor substrate with a greatly reduced micro-loading effect. The etch proceeds in three steps. The first step is a uniform etch which utilizes a gas chemistry of SF.sub.6, O.sub.2 and He and proceeds for a predetermined time to remove most of the metal layer. The second step is a very uniform etch which utilizes a gas chemistry of SF.sub.6, Cl.sub.2 and He and proceeds until the endpoint is detected. The endpoint is detected by measurement and integration of the 772 nm and 775 nm lines of Cl. The third step is a timed etch utilizing a gas chemistry of Cl.sub.2 and He which is used as both an overetch to ensure complete removal of the refractory metal film and as a selective etchant to remove an adhesion underlayer.

摘要翻译： 用于蚀刻形成在半导体衬底上的难熔金属层，具有大大降低的微负载效应的回蚀工艺。 蚀刻在三个步骤中进行。 第一步是使用SF6，O2和He的气体化学物质的均匀蚀刻，并且进行预定时间以去除大部分金属层。 第二步是使用SF6，Cl2和He的气体化学物质的非常均匀的蚀刻，并继续进行直到检测到端点。 通过测量和整合Cl的772nm和775nm线来检测终点。 第三步是利用Cl2和He的气体化学进行的定时蚀刻，其用作保护完全去除难熔金属膜的过滤材料，以及作为去除粘附底层的选择性蚀刻剂。

公开(公告)号：US5167760A

公开(公告)日：1992-12-01

申请号：US711361

申请日：1991-06-05

申请人： Xiao-Chun Mu ,  Jagir Multani

发明人： Xiao-Chun Mu ,  Jagir Multani

IPC分类号： H01L21/3213 ,  H01L21/768

CPC分类号： H01L21/7684 ,  H01L21/32136

摘要： An etchback process for etching a refractory metal layer formed on a semiconductor substrate with a greatly reduced micro-loading effect. The etch proceeds in three steps. The first step is a uniform etch which utilizes a gas chemistry of SF.sub.6, O.sub.2 and He and proceeds for a predetermined time to remove most of the metal layer. The second step is a very uniform etch which utilizes a gas chemistry of SF.sub.6, Cl.sub.2 and He and proceeds until the endpoint is detected. The endpoint is detected by measurement and integration of the 772 nm and 775 nm lines of Cl. The third step is a timed etch utilizing a gas chemistry of Cl.sub.2 and He which is used as both an overetch to ensure complete removal of the refractory metal film and as a selective etchant to remove an adhesion underlayer.

摘要翻译： 用于蚀刻形成在半导体衬底上的难熔金属层，具有大大降低的微负载效应的回蚀工艺。 蚀刻在三个步骤中进行。 第一步是使用SF6，O2和He的气体化学物质的均匀蚀刻，并且进行预定时间以去除大部分金属层。 第二步是使用SF6，Cl2和He的气体化学物质的非常均匀的蚀刻，并继续进行直到检测到端点。 通过测量和整合Cl的772nm和775nm线来检测终点。 第三步是利用Cl2和He的气体化学进行的定时蚀刻，其用作保护完全去除难熔金属膜的过滤材料，以及作为去除粘附底层的选择性蚀刻剂。

公开(公告)号：US5035768A

公开(公告)日：1991-07-30

申请号：US560988

申请日：1990-07-30

申请人： Xiao-Chun Mu ,  Jagir Multani

发明人： Xiao-Chun Mu ,  Jagir Multani

IPC分类号： C23F4/00 ,  H01L21/3213 ,  H01L21/768

CPC分类号： C23F4/00 ,  H01L21/32136 ,  H01L21/7684

摘要： An etchback process for etching a refractory metal layer formed on a semiconductor substrate with a greatly reduced micro-loading effect. The etch proceeds in three steps. The first step is a uniform etch which utilizes a gas chemistry of SF.sub.6, O.sub.2 and He and proceeds for a predetermined time to remove most of the metal layer. The second step is a very uniform etch which utilizes a gas chemistry of SF.sub.6, Cl.sub.2 and He and proceeds until the endpoint is detected. The endpoint is detected by measurement and integration of the 772 nm and 775 nm lines of Cl. The third step is a timed etch utilizing a gas chemistry of Cl.sub.2 and He which is used as both an overetch to ensure complete removal of the refractory metal film and as a selective etchant to remove an adhesion underlayer.

摘要翻译： 用于蚀刻形成在半导体衬底上的难熔金属层，具有大大降低的微负载效应的回蚀工艺。 蚀刻在三个步骤中进行。 第一步是使用SF6，O2和He的气体化学物质的均匀蚀刻，并且进行预定时间以去除大部分金属层。 第二步是使用SF6，Cl2和He的气体化学物质的非常均匀的蚀刻，并继续进行直到检测到端点。 通过测量和整合Cl的772nm和775nm线来检测终点。 第三步是利用Cl2和He的气体化学进行的定时蚀刻，其用作保护完全去除难熔金属膜的过滤材料，以及作为去除粘附底层的选择性蚀刻剂。