专利检索 ap:("Xidian University") AND inv:"Xinlong SHI" 第 1 页

1.

发明公开
CMOS STRUCTURE, AND FABRICATION METHODS OF FINFET CMOS, FD CMOS AND GAA CMOS 审中-公开

公开(公告)号：US20230223408A1

公开(公告)日：2023-07-13

申请号：US18122783

申请日：2023-03-17

申请人： Xidian University

发明人： Huiyong HU , Liming WANG , Bin SHU , Bin WANG , Ningning ZHANG , Tian MIAO , Jian ZHANG , Lingyao MENG , Maolong YANG , Xinlong SHI , Heming ZHANG

IPC分类号： H01L27/12 , H01L21/84

CPC分类号： H01L27/1211 , H01L21/845

摘要： Provided are a CMOS structure, and fabrication methods of a FinFET CMOS, an FD CMOS and a GAA CMOS. The CMOS structure includes an nMOS and a pMOS, The nMOS includes a first channel region and a first gate electrode formed on a semiconductor substrate, and the pMOS includes a second channel region and a second gate electrode formed on the semiconductor substrate, where the first channel region and the second channel region are formed of semiconductor materials with the same conductivity type, and the first gate electrode and the second gate electrode are formed of the conductive materials with the same work function. This CMOS structure reduces the processing steps for fabricating the CMOS, thereby reducing the process complexity and the production cost, which is beneficial for improving the performance and reliability of CMOS and its integrated circuits.