公开(公告)号：US20180083096A1

公开(公告)日：2018-03-22

申请号：US15272292

申请日：2016-09-21

Applicant: Xilinx, Inc.

Inventor： Jing Jing ,  Shuxian Wu ,  Jane Sowards

IPC: H01L29/06 ,  H01L21/761

CPC classification number: H01L29/0623 ,  H01L21/761 ,  H01L21/823481

Abstract: An example a semiconductor device includes a first circuit and a second circuit formed in a semiconductor substrate. The semiconductor device further includes a first guard structure formed in the semiconductor substrate and disposed between the first circuit and the second circuit, the first guard structure including first discontinuous pairs of n+ and p+ diffusions disposed along a first axis. The semiconductor device further includes a second guard structure formed in the semiconductor substrate and disposed between the first circuit and the second circuit, the second guard structure including second discontinuous pairs of n+ and p+ diffusions disposed along the first axis, the second discontinuous pairs of n+ and p+ diffusions being staggered with respect to the first discontinuous pairs of n+ and p+ diffusions.

公开(公告)号：US09923051B1

公开(公告)日：2018-03-20

申请号：US15272292

申请日：2016-09-21

Applicant: Xilinx, Inc.

Inventor： Jing Jing ,  Shuxian Wu ,  Jane Sowards

IPC: H01L29/06 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/48 ,  H01L29/78 ,  H01L21/761

CPC classification number: H01L29/0623 ,  H01L21/761 ,  H01L21/823481

Abstract: An example a semiconductor device includes a first circuit and a second circuit formed in a semiconductor substrate. The semiconductor device further includes a first guard structure formed in the semiconductor substrate and disposed between the first circuit and the second circuit, the first guard structure including first discontinuous pairs of n+ and p+ diffusions disposed along a first axis. The semiconductor device further includes a second guard structure formed in the semiconductor substrate and disposed between the first circuit and the second circuit, the second guard structure including second discontinuous pairs of n+ and p+ diffusions disposed along the first axis, the second discontinuous pairs of n+ and p+ diffusions being staggered with respect to the first discontinuous pairs of n+ and p+ diffusions.