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公开(公告)号：US20190295748A1
公开(公告)日：2019-09-26
申请号：US15963116
申请日：2018-04-26
申请人： YAGEO CORPORATION
发明人： Shen-Li HSIAO , Kuang-Cheng LIN , Hwan-Wen LEE , Chih-Lung CHEN
摘要： A method for manufacturing a shunt resistor is described. In this method, a first electrode plate and a second electrode plate are provided. The first electrode plate includes a first carrying portion having a first hole. The second electrode plate includes a second carrying portion having a second hole. A resistor plate is placed between the first and second electrode plates. The resistor plate has a first through hole and a second through hole respectively on the first hole and the second hole. A first rivet is pressed into the first through hole and the first hole. A second rivet is pressed into the second through hole and the second hole. Current is applied to the first rivet and the second rivet to weld the first rivet, the first electrode plate and the resistor plate, and to weld the second rivet, the second electrode plate and the resistor plate.
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公开(公告)号：US20240006098A1
公开(公告)日：2024-01-04
申请号：US17930417
申请日：2022-09-08
申请人： YAGEO CORPORATION
发明人： Shen-Li HSIAO , Kuang-Cheng LIN , Ren-Hong WANG
摘要： An anti-surge resistor and a fabrication method thereof are provided. The current anti-surge resistor includes a substrate made by a varistor material, a resistance layer disposed on the substrate, a first terminal electrode, and a second terminal electrode. In the fabrication method of the current anti-surge resistor, at first, the substrate made by the varistor material is provided. Then, the resistance layer is formed on the substrate to provide a main body, in which the main body includes the substrate and the resistance layer, and has two opposite terminals. Thereafter, the first terminal electrode is formed on one terminal of the main body, and the second terminal electrode is formed on the other terminal of the main body.
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公开(公告)号：US20240029960A1
公开(公告)日：2024-01-25
申请号：US17938678
申请日：2022-10-07
申请人： YAGEO CORPORATION
发明人： Shen-Li HSIAO , Kuang-Cheng LIN , Po-Hsun SHIH
摘要： A thin-film chip resistor-capacitor includes a substrate, a resistor layer, a dielectric layer, a thin-film capacitor layer, a first terminal electrode and a second terminal electrode. The resistor layer is disposed on the substrate. The dielectric layer is disposed on the resistor layer. The thin-film capacitor layer is disposed on the dielectric layer and includes first and second capacitor electrodes that are physically separated with respect to each other. The first terminal electrode is disposed on a first side edge of the substrate and is coupled to the resistor layer and the first capacitor electrode. The second terminal electrode is disposed on a second side edge of the substrate opposite to the first side edge and is coupled to the resistor layer and the second capacitor electrode.
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公开(公告)号：US20190287701A1
公开(公告)日：2019-09-19
申请号：US15963117
申请日：2018-04-26
申请人： YAGEO CORPORATION
发明人： Shen-Li HSIAO , Kuang-Cheng LIN , Hwan-Wen LEE , Chih-Lung CHEN
摘要： In a method for manufacturing a shunt resistor, a resistor plate with a first side surface and a second side surface opposite to each other is provided. A first electrode plate and a second electrode plate are respectively pressed onto the first side surface and the second side surface, thereby forming a first connection surface between the first electrode plate and the resistor plate, and a second connection surface between the second electrode plate and the resistor plate. A first conductive module is placed on opposite ends of the first connection surface, and a second conductive module is placed on opposite ends of the second connection surface. Current is applied to the first and second connection surfaces via the first and second conductive modules respectively to weld the first electrode plate and the resistor plate, and to weld the second electrode plate and the resistor plate.
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