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公开(公告)号：US10790297B2
公开(公告)日：2020-09-29
申请号：US16195855
申请日：2018-11-20
发明人： Baoyou Chen , Weihua Cheng , Hai Hui Huang , Zhuqing Huang , Guanping Wu , Hongbin Zhu , Yu Qi Wang
IPC分类号： H01L27/11582 , H01L21/02 , H01L21/311 , H01L27/11556
摘要： Embodiments of methods for forming channel holes in 3D memory devices using a nonconformal sacrificial layer are disclosed. In an example, a dielectric stack including interleaved first dielectric layers and second dielectric layers is formed on a substrate. An opening extending vertically through the dielectric stack is formed. A nonconformal sacrificial layer is formed along a sidewall of the opening, such that a variation of a diameter of the opening decreases. The nonconformal sacrificial layer and part of the dielectric stack abutting the nonconformal sacrificial layer are removed. A channel structure is formed in the opening after removing the nonconformal sacrificial layer and part of the dielectric stack.
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2.发明申请公开(公告)号：US20200119042A1
公开(公告)日：2020-04-16
申请号：US16195855
申请日：2018-11-20
发明人： Baoyou Chen , Weihua Cheng , Hai Hui Huang , Zhuqing Huang , Guanping Wu , Hongbin Zhu , Yu Qi Wang
IPC分类号： H01L27/11582 , H01L27/11556 , H01L21/311 , H01L21/02
摘要： Embodiments of methods for forming channel holes in 3D memory devices using a nonconformal sacrificial layer are disclosed. In an example, a dielectric stack including interleaved first dielectric layers and second dielectric layers is formed on a substrate. An opening extending vertically through the dielectric stack is formed. A nonconformal sacrificial layer is formed along a sidewall of the opening, such that a variation of a diameter of the opening decreases. The nonconformal sacrificial layer and part of the dielectric stack abutting the nonconformal sacrificial layer are removed. A channel structure is formed in the opening after removing the nonconformal sacrificial layer and part of the dielectric stack.
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