公开(公告)号：US11467084B2

公开(公告)日：2022-10-11

申请号：US16706008

申请日：2019-12-06

申请人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.

发明人： Junzhan Liu ,  Chao Shen ,  Zhiliang Xia ,  Qiangmin Wei ,  Lei Li ,  Hai Song ,  Bingguo Wang

IPC分类号： H01L21/02 ,  G01N23/04 ,  G01N21/31 ,  G01N21/95 ,  G01N23/225 ,  H01L21/66

摘要： Aspects of the disclosure provide methods for polysilicon characterization. The method includes receiving image data of a polysilicon structure formed on a sample substrate. The image data is in a spatial domain and is generated by transmission electron microscopy (TEM). Further, the method includes extracting frequency spectrum of the image data in a frequency domain. Then, the method includes selecting a subset of the frequency spectrum that corresponds to characteristic of first crystal grains that are of a first orientation, and transforming the selected subset of the frequency spectrum to the spatial domain to construct a first spatial image for the first crystal grains of the first orientation.